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Recently a new type diluted magnetic semiconductor (BaK)(ZnMn)2As2 (BZA) with high Cure temperature (Tc) was discovered showing independent spin and charge doping mechanism. This makes BZA a promising material for spintronics devices. Here we report for the first time the successful growth of BZA single crystal. An Andreev reflection junction that can be used to evaluate spin polarization was fabricated based on the BZA single crystal, a 66% spin polarization of the BZA single crystal was hence obtained by Andreev reflection spectroscopy analysis.
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Here we report the successful synthesis of a spin- & charge-decoupled diluted magnetic semiconductor (Ca,Na)(Zn,Mn)2As2, crystallizing into the hexagonal CaAl2Si2 structure. The compound shows a ferromagnetic transition with a Curie temperature up to 33 K with 10% Na doping, which gives rise to carrier density of np~10^20 cm^-3. The new DMS is a soft magnetic material with HC<400 Oe. The anomalous Hall effect is observed below the ferromagnetic ordering temperature. With increasing Mn doping, ferromagnetic order is accompanied by an interaction between the local spin and mobile charge, giving rise to a minimum in resistivity at low temperatures and localizing the conduction electrons. The system provides an ideal platform for studying the interaction of the local spins and conduction electrons.
Diluted ferromagnetic semiconductors (DMSs) that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronics (spintronics) devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in III-V (Ga,Mn)As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature $T_C$ of 230 K has been achieved in (Ba,K)(Zn,Mn)$_2$As$_2$. However, most DMSs, including (Ga,Mn)As, are p-type, i.e., the carriers that mediate ferromagnetism are holes. For practical applications, DMS with n-type carriers are also advantageous. Here we report the successful synthesis of a II-II-V diluted ferromagnetic semiconductor with n-type carriers, Ba(Zn,Co)$_2$As$_2$. Magnetization measurements show that the ferromagnetic transition occurs up to $T_{C} sim$ 45 K. Hall effect and Seebeck effect measurements jointly confirm that the dominant carriers are electrons. Through muon spin relaxation ($mu$SR), a volume sensitive magnetic probe, we have also confirmed that the ferromagnetism in Ba(Zn,Co)$_2$As$_2$ is intrinsic and the internal field is static.
We report the discovery of a new diluted magnetic semiconductor, Li(Zn,Mn)P, in which charge and spin are introduced independently via lithium off-stoichiometry and the isovalent substitution of Mn2+ for Zn2+, respectively. Isostructural to (Ga,Mn)As, Li(Zn,Mn)P was found to be a p-type ferromagnetic semiconductor with excess Lithium providing charge doping. First principles calculations indicate that excess Li is favored to partially occupy the Zn site, leading to hole doping. Ferromagnetism is mediated in semiconducting samples of relative low mobile carriers with a small coercive force, indicating an easy spin flip.
We use muon spin relaxation (muSR) to investigate the magnetic properties of a bulk form diluted ferromagnetic semiconductor (DFS) Li1.15(Zn0.9Mn0.1)P with T_C ~ 22 K. MuSR results confirm the gradual development of ferromagnetic ordering below T_C with a nearly 100% magnetic ordered volume. Despite its low carrier density, the relation between static internal field and Curie temperature observed for Li(Zn,Mn)P is consistent with the trend found in (Ga,Mn)As and other bulk DFSs, indicating these systems share a common mechanism for the ferromagnetic exchange interaction. Li1+y(Zn1-xMnx)P has the advantage of decoupled carrier and spin doping, where Mn2+ substitution for Zn2+ introduces spins and Li+ off-stoichiometry provides carriers. This advantage enables us to investigate the influence of overdoped Li on the ferromagnetic ordered state. Overdoping Li suppresses both T_C and saturation moments for a certain amount of spins, which indicates that more carriers are detrimental to the ferromagnetic exchange interaction, and that a delicate balance between charge and spin densities is required to achieve highest T_C.
We have developed the laser-diode-heated floating zone (LDFZ) method, in order to improve the broad and inhomogeneous light focusing in the conventional lamp-heated floating zone method, which often causes difficulties in the crystal growth especially for the incongruently melting materials. We have simulated the light focusing properties of the LDFZ method to make irradiated light homogeneous and restricted mostly to the molten zone. We have designed and assembled an LDFZ furnace, and have demonstrated how it works through actual crystal growth. The method is applicable to various kinds of materials, and enables stable and reproducible crystal growth even for the incongruently melting materials. We have succeeded in the crystal growth of representative incongruently melting materials such as BiFeO3 and (La,Ba)2CuO4, which are difficult to grow by the conventional method. Tolerance to the decentering of the sample and highly efficient heating are also established in the LDFZ method.
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