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Register a new userDomain Wall Motion and Interfacial Dzyaloshinskii-Moriya Interactions in Pt/Co/Ir$(t_mathrm{Ir})$/Ta Multilayers
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Added by
Prof. Christopher Marrows
Publication date
2018
fields
Physics
and research's language is
English
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The interfacial Dzyaloshinskii-Moriya interaction (DMI) is important for chiral domain walls (DWs) and for stabilizing magnetic skyrmions. We study the effects of introducing increasing thicknesses of Ir, from zero to 2 nm, into a Pt/Co/Ta multilayer between the Co and Ta. We observe a marked increase in magnetic moment, due to the suppression of the dead layer at the interface with Ta, but the perpendicular anisotropy is hardly affected. All samples show a universal scaling of the field-driven domain wall velocity across the creep and depinning regimes. Asymmetric bubble expansion shows that DWs in all of the samples have the left-handed N{e}el form. The value of in-plane field at which the creep velocity shows a minimum drops markedly on the introduction of Ir, as does the frequency shift of the Stokes and anti-Stokes peaks in Brillouin light scattering measurements. Despite this qualitative similarity, there are quantitative differences in the DMI strength given by the two measurements, with BLS often returning higher values. Many features in bubble expansion velocity curves do not fit simple models commonly used to date, namely a lack of symmetry about the velocity minimum and no difference in velocities at high in-plane field. These features are explained by the use of a model in which the depinning field is allowed to vary with in-plane field in a way determined from micromagnetic simulations. This theory shows that velocity minimum underestimates the DMI field, consistent with BLS returning higher values. Our results suggest that the DMI at an Ir/Co interface has the same sign as the DMI at a Pt/Co interface.
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We study the magnetic properties of perpendicularly magnetised Pt/Co/Ir thin films and investigate the domain wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultra-thin films. Measurements of the Co layer thickness dependence of saturation magnetisation, perpendicular magnetic anisotropy, and symmetric and antisymmetric (i.e. DM) exchange energies in Pt/Co/Ir thin films have been made to determine the relationship between these properties. We discuss the measurement of the DM interaction by the expansion of a reverse domain in the domain wall creep regime. We show how the creep parameters behave as a function of in-plane bias field and discuss the effects of domain wall roughness on the measurement of the DM interaction by domain expansion. Whereas modifications to the creep law with DM field and in-plane bias fields have taken into account changes in the energy barrier scaling parameter $alpha$, we find that both $alpha$ and the velocity scaling parameter $v_{0}$ change as a function of in-plane bias field.
The interfacial Dzyaloshinskii-Moriya interaction (iDMI) is attracting great interests for spintronics. An iDMI constant larger than 3 mJ/m^2 is expected to minimize the size of skyrmions and to optimize the DW dynamics. In this study, we experimentally demonstrate an enhanced iDMI in Pt/Co/X/MgO ultra-thin film structures with perpendicular magnetization. The iDMI constants were measured using a field-driven creep regime domain expansion method. The enhancement of iDMI with an atomically thin insertion of Ta and Mg is comprehensively understood with the help of ab-initio calculations. Thermal annealing has been used to crystallize the MgO thin layer for improving tunneling magneto-resistance (TMR), but interestingly it also provides a further increase of the iDMI constant. An increase of the iDMI constant up to 3.3 mJ/m^2 is shown, which could be promising for the scaling down of skyrmion electronics.
Despite a decade of research, the precise mechanisms occurring at interfaces underlying the Dzyaloshinskii-Moriya interaction (DMI), and thus the possibility of fine-tuning it, are not yet fully identified. In this study, we investigate the origin of the interfacial DMI, aiming at disentangling how independent are the interfaces around the ferromagnetic layer, and what are their relative contributions to the effective DMI amplitude. For this purpose, we have grown and investigated a large variety of systems with a common structure Pt$|$Co$|M$ with $M =$ Ni, Pd, Ru, Al, Al$|$Ta and MoSi. We explore the correlation between the effective interfacial DMI, and different intrinsic properties of metals, namely atomic number, electronegativity and work function difference at the Co$|M$ interfaces. We find a linear relationship between interfacial DMI and the work function difference between the two elements, hence relating the nature of this behavior to the interfacial potential gradient at the metallic interfaces. The understanding of the DMI mechanism is of utmost importance since it opens up the possibility of precisely engineering the magnetic and hence the spintronic properties for future devices.
Magnetic skyrmions are nanoscale topological spin structures offering great promise for next-generation information storage technologies. The recent discovery of sub-100 nm room temperature (RT) skyrmions in several multilayer films has triggered vigorous efforts to modulate their physical properties for their use in devices. Here we present a tunable RT skyrmion platform based on multilayer stacks of Ir/Fe/Co/Pt, which we study using X-ray microscopy, magnetic force microscopy and Hall transport techniques. By varying the ferromagnetic layer composition, we can tailor the magnetic interactions governing skyrmion properties, thereby tuning their thermodynamic stability parameter by an order of magnitude. The skyrmions exhibit a smooth crossover between isolated (metastable) and disordered lattice configurations across samples, while their size and density can be tuned by factors of 2 and 10 respectively. We thus establish a platform for investigating functional sub-50 nm RT skyrmions, pointing towards the development of skyrmion-based memory devices.
Topological defects such as magnetic solitons, vortices, Bloch lines, and skyrmions have started to play an important role in modern magnetism because of their extraordinary stability, which can be exploited in the production of memory devices. Recently, a novel type of antisymmetric exchange interaction, namely the Dzyaloshinskii-Moriya interaction (DMI), has been uncovered and found to influence the formation of topological defects. Exploring how the DMI affects the dynamics of topological defects is therefore an important task. Here we investigate the dynamic domain wall (DW) under a strong DMI and find that the DMI induces an annihilation of topological vertical Bloch lines (VBLs) by lifting the four-fold degeneracy of the VBL. As a result, velocity reduction originating from the Walker breakdown is completely suppressed, leading to a soliton-like constant velocity of the DW. Furthermore, the strength of the DMI, which is the key factor for soliton-like DW motion, can be quantified without any side effects possibly arising from current-induced torques or extrinsic pinnings in magnetic films. Our results therefore shed light on the physics of dynamic topological defects, which paves the way for future work in topology-based memory applications.
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