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Register a new userStatic and Dynamic Signatures of Anisotropic Electronic Phase Separation in La2/3Ca1/3MnO3 Thin Films under Anisotropic Strain
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The electronic phase separation (EPS) of optimally doped La2/3Ca1/3MnO3 (LCMO) thin films under various degrees of anisotropic strain is investigated by static magnetotransport and dynamic relaxation measurements. Three LCMO films were grown simultaneously on (001) NdGaO3 (NGO) substrates by pulsed laser deposition, and then post-growth annealed at 780 oC in O2 for different durations of time. With increasing annealing time, the films developed significant strains of opposite signs along the two orthogonal in-plane directions. The static temperature-dependent resistivity, R(T), was measured simultaneously along the two orthogonal directions. With increasing annealing time, both zero-field-cooled and field-cooled R(T) show significant increases, suggesting strain-triggered EPS and appearance of antiferromagnetic insulating (AFI) phases in a ferromagnetic metallic (FMM) ground state. Meanwhile, R(T) along the tensile-strained [010] direction becomes progressively larger than that along the compressive-strained [100]. The enhanced resistivity anisotropy indicates that the EPS is characterized by phase-separated FMM entities with a preferred orientation along [100], possibly due to the cooperative deformation and rotation/tilting of the MnO6 octahedra under the enhanced anisotropic strain. The anisotropic EPS can also be tuned by an external magnetic field. During a field-cycle at several fixed temperatures, the AFI phases are melted at high fields and recovered at low fields, resulting in sharp resistance changes of the ratio as high as 104. Furthermore, the resistivity was found to exhibit glass-like behavior, relaxing logarithmically in the phase-separated states. Fitting the data to a phenomenological model, the resulting resistive viscosity and characteristic relaxation time are found to evolve with temperature, showing a close correlation with the static measurements in the EPS states.
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A Mn valence instability on La2/3Ca1/3MnO3 thin films, grown on LaAlO3 (001)substrates is observed by x-ray absorption spectroscopy at the Mn L-edge and O K-edge. As-grown samples, in situ annealed at 800 C in oxygen, exhibit a Curie temperature well below that of the bulk material. Upon air exposure a reduction of the saturation magnetization, MS, of the films is detected. Simultaneously a Mn2+ spectral signature develops, in addition to the expected Mn3+ and Mn4+ contributions, which increases with time. The similarity of the spectral results obtained by total electron yield and fluorescence yield spectroscopy indicates that the location of the Mn valence anomalies is not confined to a narrow surface region of the film, but can extend throughout the whole thickness of the sample. High temperature annealing at 1000 C in air, immediately after growth, improves the magnetic and transport properties of such films towards the bulk values and the Mn2+ signature in the spectra does not appear. The Mn valence is then stable even to prolonged air exposure. We propose a mechanism for the Mn2+ ions formation and discuss the importance of these observations with respect to previous findings and production of thin films devices.
Low frequency electrical noise measurements have been used to probe the electronic state of the perovskite-type manganese oxide Pr2/3Ca1/3MnO3 versus temperature and in the vicinity of the field-induced transition from the insulating, charge-ordered state (I-CO) to the metallic, ferromagnetic state (M-F). At high temperature we have observed a high level of the excess noise with mainly a gaussian distribution of the resistance fluctuations, and the associated power spectral density has a standard 1/f dependence. However, in the hysteretic region, where the electrical resistance depends dramatically on the sample history, we have observed a huge non-gaussian noise characterized by two level fluctuator-like switching (TLS) in the time domain. We discuss the origin of the noise in terms of percolative behavior of the conductivity. We speculate that the dominant fluctuators are manganese clusters switching between the M-F and the I-CO phases.
The existence of coherent magnetic correlations in the normal phase of cuprate high-temperature superconductors has proven difficult to measure directly. Here we report on a study of ferromagnetic-superconductor bilayers of La2/3Ca1/3MnO3/YBa2Cu3O7 (LCMO/YBCO) with varying YBCO layer thicknesses. Using x-ray magnetic circular dichroism, we demonstrate that the ferromagnetic layer induces a Cu magnetic moment in the adjacent high-temperature superconductor. For thin samples, this moment exists at all temperatures below the Curie temperature of the LCMO layer. However, for a YBCO layer thicker than 12 unit cells, the Cu moment is suppressed for temperatures above the superconducting transition, suggesting this to be a direct measurement of magnetic coherence in the normal state of a superconducting oxide.
Understanding and manipulating properties emerging at a surface or an interface require a thorough knowledge of structure-property relationships. We report a study of a prototype oxide system, La2/3Sr1/3MnO3 grown on SrTiO3(001), by combining in-situ angle-resolved x-ray photoelectron spectroscopy, ex-situ x-ray diffraction, and scanning transmission electron microscopy/spectroscopy with electric transport measurements. We find that La2/3Sr1/3MnO3 films thicker than 20 unit cells (u.c.) exhibit a universal behavior with no more than one u.c. intermixing at the interface but at least 3 u.c. of Sr segregation near the surface which is (La/Sr)O terminated. The conductivity vs film thickness shows the existence of nonmetallic layers with thickness ~ 6.5 +/- 0.9 u.c., which is independent of film thickness but mainly relates to the deviation of Sr concentration near the surface region. Below 20 u.c., the surface of the films appears mixed (La/Sr)O with MnO2 termination. Decreasing film thickness to less than 10 u.c. leads to the enhanced deviation of chemical composition in the films and eventually drives the film insulating. Our observation offers a natural explanation for the thickness-driven metal-nonmetal transition in thin films based on the variation of film stoichiometry.
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