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Register a new userUltra-low Power Microwave Oscillators based on Phase Change Oxides as Solid-State Neurons
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Neuro-inspired computing architectures are one of the leading candidates to solve complex, large-scale associative learning problems. The two key building blocks for neuromorphic computing are the synapse and the neuron, which form the distributed computing and memory units. Solid state implementations of these units remain an active area of research. Specifically, voltage or current controlled oscillators are considered a minimal representation of neurons for hardware implementations. Such oscillators should demonstrate synchronization and coupling dynamics for demonstrating collective learning behavior, besides the desirable individual characteristics such as scaling, power, and performance. To this end, we propose the use of nanoscale, epitaxial heterostructures of phase change oxides and oxides with metallic conductivity as a fundamental unit of an ultralow power, tunable electrical oscillator capable of operating in the microwave regime. Our simulations show that optimized heterostructure design with low thermal boundary resistance can result in operation frequency of up to 3 GHz and power consumption as low as 15 fJ/cycle with rich coupling dynamics between the oscillators.
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Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state and information they carry are lost once the power is turned off-they are volatile. The volatility not only compromises energy efficiency due to their demand for constant power supply, but also precludes them from emerging applications such as in-memory computing. To circumvent this limitation, we introduce a novel phase shifting mechanism that exploits the nonvolatile refractive index modulation upon structural phase transition of Sb$_{2}$Se$_{3}$, an ultralow-loss phase change material. A zero-static power and electrically-driven phase shifter was realized on a foundry-processed silicon-on-insulator platform, featuring record phase modulation up to 0.09 $pi$/$mu$m and a low insertion loss of 0.3 dB/$pi$. We further pioneered a one-step partial amorphization scheme to enhance the speed and energy efficiency of PCM devices. A diverse cohort of programmable photonic devices were demonstrated based on the ultracompact PCM phase shifter.
A technique for rapidly detecting microwave phase has been developed which uses a spintronic device that can directly rectify microwave fields into a dc voltage signal. Use of a voltage-controlled phase shifter enables the development of a spintronic device that can simultaneously read the magnitude and phase of incident continuous-wave (CW) microwaves when combined with a lock-in amplifier. As an example of many possible practical applications of this device, the resonance phase in a complementary electric inductive-capacitive (CELC) resonator has been characterized using a spintronic sensor based on a magnetic tunnel junction (MTJ). This sensor device is not limited for use only with spintronic devices such as MTJs, but can also be used with semiconductor devices such as microwave detectors, and hence offers a useful alternative to existing microwave imaging and characterization technologies.
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However, non-idealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here we investigate the projection mechanism in a prominent phase-change memory device architecture, namely mushroom-type phase-change memory. Using nanoscale projected Ge2Sb2Te5 devices we study the key attributes of state-dependent resistance, drift coefficients, and phase configurations, and using them reveal how these devices fundamentally work.
A simple method has been used to synthesize nanostructured La0.5Ba0.5CoO3 (LBCO) powders, by confining chemical precursors into the pores of polycarbonate filters. The proposed method allows us to obtain powders formed by crystallites of different sizes, it is scalable and does not involve the use of sophisticated deposition techniques. The area specific polarization resistance of symmetrical cells was studied to analyze the electrochemical behavior of the LBCO nanostructures as cathodes for Solid-Oxide Fuel Cells. We show that the performance is improved by reducing the size of the crystallites, obtaining area specific resistance values of 0.2 Wcm2 at 700C, comparable with newly developed cathodes using novel deposition techniques.
Thermal wave crystals based on the dual-phase-lag model are investigated in this paper by both theoretical analysis and numerical simulation to control the non-Fourier heat conduction process. The transfer matrix method is used to calculate the complex dispersion curves. The temperature field is calculated by the finite difference time domain method. The results show that thermal band-gaps exist due to the Bragg-scattering. The key parameters characterizing the band-gaps are analyzed. The thermal wave impedance and mid-gap frequencies are introduced to predict band-gaps theoretically. Our results show that the larger the difference in the thermal wave impedances is, the wider of the thermal band-gaps will be. This study demonstrates a type of the thermal metamaterials which have potential innovative applications such as thermal imagining, thermal diodes and thermal waveguides for energy transmission.
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