Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userTopological nature of step edge states on the surface of topological crystalline insulator Pb$_{0.7}$Sn$_{0.3}$Se
111
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
In addition to novel surface states, topological insulators can also exhibit robust gapless states at crystalline defects. Step edges constitute a class of common defects on the surface of crystals. In this work we establish the topological nature of one-dimensional (1D) bound states localized at step edges of the [001] surface of a topological crystalline insulator (TCI) Pb$_{0.7}$Sn$_{0.3}$Se, both theoretically and experimentally. We show that the topological stability of the step edge states arises from an emergent particle-hole symmetry of the surface low-energy physics, and demonstrate the experimental signatures of the particle-hole symmetry breaking. We also reveal the effects of an external magnetic field on the 1D bound states. Our work suggests the possibility of similar topological step edge modes in other topological materials with a rocks-salt structure.
rate research
Read More
We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $bar{Gamma}$ and $bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the parallel dispersion isotropy and Dirac-point binding energy of the surface states, and perform tight-binding calculations to support our findings. The relative simplicity of the growth technique is encouraging, and suggests a clear path for future investigations into the role of strain, vicinality and alternative surface orientations in (Pb,Sn)Se compounds.
Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested the existence of topological crystalline insulators, a novel class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in topological protection [1,2]. In this study, we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a topological crystalline insulator for x=0.23. Temperature-dependent magnetotransport measurements and angle-resolved photoelectron spectroscopy demonstrate that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a topological crystalline insulator. These experimental findings add a new class to the family of topological insulators. We expect these results to be the beginning of both a considerable body of additional research on topological crystalline insulators as well as detailed studies of topological phase transitions.
Topological crystalline insulators represent a novel topological phase of matter in which the surface states are protected by discrete point group-symmetries of the underlying lattice. Rock-salt lead-tin-selenide alloy is one possible realization of this phase which undergoes a topological phase transition upon changing the lead content. We used scanning tunneling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES) to probe the surface states on (001) Pb$_{1-x}$Sn$_{x}$Se in the topologically non-trivial (x=0.23) and topologically trivial (x=0) phases. We observed quasiparticle interference with STM on the surface of the topological crystalline insulator and demonstrated that the measured interference can be understood from ARPES studies and a simple band structure model. Furthermore, our findings support the fact that Pb$_{0.77}$Sn$_{0.23}$Se and PbSe have different topological nature.
We study the surface states and chiral hinge states of a 3D second-order topological insulator in the presence of an external magnetic gauge field. Surfaces pierced by flux host Landau levels, while surfaces parallel to the applied field are not significantly affected. The chiral hinge modes mediate spectral flow between neighbouring surfaces. As the magnetic field strength is increased, the surface Landau quantization deviates from that of a massive Dirac cone. Quantitatively, the $n = 0$ Landau level falls inside the surface Dirac gap, and not at the gap edge. The $n e 0$ levels exhibit a further, qualitative discrepancy: while the massive Dirac cone is expected to produce pairs of levels ($pm n$) which are symmetric around zero energy, the $n$ and $-n$ levels become asymmetric in our lattice model -- one of the pair may even be absent from the spectrum, or hybridized with the continuum. In order to resolve the issue, we extend the standard 2D massive Dirac surface theory, by including additional Hamiltonian terms at $mathcal{O} (k^2)$. While these terms do not break particle-hole symmetry in the absence of magnetic field, they lead to the aforementioned Landau level asymmetry once the magnetic field is applied. We argue that similar $mathcal{O}(k^2)$ correction terms are generically expected in lattice models containing gapped Dirac fermions, using the BHZ model of a 2D topological insulator as an example.
Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial to nontrivial topological phase transition. To understand how the properties critical to thermoelectric efficiency are affected by the band inversion, we measured the broadband optical response of Pb$_{0.77}$Sn$_{0.23}$Se as a function of temperature. We find clear optical evidence of the band inversion at $160pm15$ K, and use the extended Drude model to accurately determine a $T^{3/2}$ dependence of the bulk carrier lifetime, associated with electron-acoustic phonon scattering. Due to the high bulk carrier doping level, no discriminating signatures of the topological surface states are found, although their presence cannot be excluded from our data.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
