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Register a new userUltralong spin lifetimes in one-dimensional semiconductor nanowires
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We experimentally demonstrate ultralong spin lifetimes of electrons in the one-dimensional (1D) quantum limit of semiconductor nanowires. Optically probing single wires of different diameters reveals an increase in the spin relaxation time by orders of magnitude as the electrons become increasingly confined until only a single 1D subband is populated. We find the observed spin lifetimes of more than $200,textrm{ns}$ to result from the robustness of 1D electrons against major spin relaxation mechanisms, highlighting the promising potential of these wires for long-range transport of coherent spin information.
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The excitation gap above the Majorana fermion (MF) modes at the ends of 1D topological superconducting (TS) semiconductor wires scales with the bulk quasiparticle gap E_{qp}. This gap, also called minigap, facilitates experimental detection of the pristine TS state and MFs at experimentally accessible temperatures T << E_{qp}. Here we show that the linear scaling of minigap with E_{qp} can fail in quasi-1D wires with multiple confinement bands when the applied Zeeman field is greater than or equal to about half of the confinement-induced bandgap. TS states in such wires have an approximate chiral symmetry supporting multiple near zero energy modes at each end leading to a minigap which can effectively vanish. We show that the problem of small minigap in such wires can be resolved by forcing the system to break the approximate chirality symmetry externally with a second Zeeman field. Although experimental signatures such as zero bias peak from the wire ends is suppressed by the second Zeeman field above a critical value, such a field is required in some important parameter regimes of quasi-1D wires to isolate the topological physics of end state MFs. We also discuss the crucial difference of our minigap calculations from the previously reported minigap results appropriate for idealized spinless p-wave superconductors and explain why the clustering of fermionic subgap states around the zero energy Majorana end state with increasing chemical potential seen in the latter system does not apply to the experimental TS states in spin-orbit coupled nanowires.
We use $vec{k}cdotvec{p}$ theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor nanowires. We specifically investigate GaAs- and InSb-based devices with different gate configurations to control symmetry and localization of the electron charge density. We explore gate-controlled SOC for wires of different size and doping, and we show that in high carrier density SOC has a non-linear electric field susceptibility, due to large reshaping of the quantum states. We analyze recent experiments with InSb nanowires in light of our calculations. Good agreement is found with SOC coefficients reported in Phys. Rev.B 91, 201413(R) (2015), but not with the much larger values reported in Nat Commun., 8, 478 (2017). We discuss possible origins of this discrepancy.
For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a sufficiently long coherence time of the spin system. Recently, hole spins in III-V-based quantum dots were discussed as alternatives to electron spins, since the hole spin, in contrast to the electron spin, is not affected by contact hyperfine interaction with the nuclear spins. Here, we report a breakthrough in the spin coherence times of hole ensembles, confined in so called natural quantum dots, in narrow GaAs/AlGaAs quantum wells at temperatures below 500 mK. Consistently, time-resolved Faraday rotation and resonant spin amplification techniques deliver hole-spin coherence times, which approach in the low magnetic field limit values above 70 ns. The optical initialisation of the hole spin polarisation, as well as the interconnected electron and hole spin dynamics in our samples are well reproduced using a rate equation model.
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and 1D hole systems with strong spin-orbit effects, motivating our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top-gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately-doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good transistor performance for moderate doping, with conduction freezing out at low temperature for lowly-doped nanowires and inability to reach a clear off-state under gating for the highly-doped nanowires. Our best devices give on-state conductivity 95 nS, off-state conductivity 2 pS, on-off ratio ~$10^{4}$, and sub-threshold slope 50 mV/dec at T = 4 K. Lastly, we made a device featuring a moderately-doped nanowire with annealed contacts and multiple top-gates. Top-gate sweeps show a plateau in the sub-threshold region that is reproducible in separate cool-downs and indicative of possible conductance quantization highlighting the potential for future quantum device studies in this material system.
Since their first experimental observation, ultralong-range Rydberg molecules consisting of a highly excited Rydberg atom and a ground state atom have attracted the interest in the field of ultracold chemistry. Especially the intriguing properties like size, polarizability and type of binding they inherit from the Rydberg atom are of interest. An open question in the field is the reduced lifetime of the molecules compared to the corresponding atomic Rydberg states. In this letter we present an experimental study on the lifetimes of the ^3Sigma (5s-35s) molecule in its vibrational ground state and in an excited state. We show that the lifetimes depends on the density of ground state atoms and that this can be described in the frame of a classical scattering between the molecules and ground state atoms. We also find that the excited molecular state has an even more reduced lifetime compared to the ground state which can be attributed to an inward penetration of the bound atomic pair due to imperfect quantum reflection that takes place in the special shape of the molecular potential.
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