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Register a new userCorrelated excited states in the narrow gap band semiconductor FeSi and antiferromagnetic screening of local spin moments
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The physical properties of the semiconductor FeSi with very narrow band gap, anomalous behavior of the magnetic susceptibility and metal-insulator transition at elevated temperatures attract gross interest due to the still controversial theoretical understanding of their origin. On one side the purely band like mechanism of the gap formation in FeSi at low temperature is well established, on other side a number of experiments and their theoretical interpretation suggest a rich physics of strong correlations at finite temperature. In this work we use an ab-initio scheme based on the Random Phase Approximation and Local Spin Density Approximation (RPA@LSDA) to reveal the role of the electron correlation effects in FeSi extending it by applying a fixed spin moment constraint. In the parameter free framework we show that correlation effects essentially alter the one-electron LSDA results leading to the formation of an additional state with finite magnetic moment on Fe, whose energy is almost degenerate with the non-magnetic ground state. This explains the results of high field experiments, which found a first-order meta-magnetic phase transition into a metallic ferromagnetic state. Our results suggest a strongly correlated nature of the low-energy excitations in FeSi. From our super-cells calculations we reveal that these excitations are local and exhibit a Kondo-like behavior since a strong antiferromagnetic screening is present.
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Iron based narrow gap semiconductors such as FeSi, FeSb2, or FeGa3 have received a lot of attention because they exhibit a large thermopower, as well as striking similarities to heavy fermion Kondo insulators. Many proposals have been advanced, however, lacking quantitative methodologies applied to this problem, a consensus remained elusive to date. Here, we employ realistic many-body calculations to elucidate the impact of electronic correlation effects on FeSi. Our methodology accounts for all substantial anomalies observed in FeSi: the metallization, the lack of conservation of spectral weight in optical spectroscopy, and the Curie susceptibility. In particular we find a very good agreement for the anomalous thermoelectric power. Validated by this congruence with experiment, we further discuss a new physical picture of the microscopic nature of the insulator-to-metal crossover. Indeed, we find the suppression of the Seebeck coefficient to be driven by correlation induced incoherence. Finally, we compare FeSi to its iso-structural and iso-electronic homologue RuSi, and predict that partially substituted Fe(1-x)Ru(x)Si will exhibit an increased thermopower at intermediate temperatures.
By direct measurements of the complex optical conductivity $sigma( u)$ of FeSi we have discovered a broad absorption peak centered at frequency $ u_{0}(4.2 K) approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is caused by spin-polaronic states formed in the middle of the gap in the electronic density of states. We observe the spin excitations between the electronic levels split by the exchange field of $H_{e}=34pm 6 T$. Spin fluctuations are identified as the main factor determining the formation of the spin polarons and the rich magnetic phase diagram of FeSi.
We present an exact solution of an experimentally realizable and strongly interacting one-dimensional spin system which is a limiting case of a quantum Ising model with long range interaction in a transverse and longitudinal field. Pronounced quantum fluctuations lead to a strongly correlated liquid ground state. For open boundary conditions the ground state manifold consists of four degenerate sectors whose quantum numbers are determined by the orientation of the edge spins. Explicit expressions for the entanglement properties, the excitation gap as well as the exact wave functions for a couple of excited states are analytically derived and discussed.
We report inelastic neutron scattering measurements aimed at investigating the origin of the temperature-induced paramagnetism in the narrow-gap semiconductor FeSb2. We find that inelastic response for energies up to 60 meV and at temperatures 4.2 K, 300 K and 550 K is essentially consistent with the scattering by lattice phonon excitations. We observe no evidence for a well-defined magnetic peak corresponding to the excitation from the non-magnetic S = 0 singlet ground state to a state of magnetic multiplet in the localized spin picture. Our data establish the quantitative limit of S_{eff}^2 < 0.25 on the fluctuating local spin. However, a broad magnetic scattering continuum in the 15 meV to 35 meV energy range is not ruled out by our data. Our findings make description in terms of the localized Fe spins unlikely and suggest that paramagnetic susceptibility of itinerant electrons is at the origin of the temperature-induced magnetism in FeSb2.
We review many-body effects, their microscopic origin, as well as their impact onto thermoelectricity in correlated narrow-gap semiconductors. Members of this class---such as FeSi and FeSb$_2$---display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie-Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators---such as Ce$_3$Bi$_4$Pt$_3$ for which we present new results---and propose a general classification of paramagnetic insulators. From the latter FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we advert to new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.
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