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Register a new userComplex nature of exchange splitting in oxide ferromagnets: A spin-resolved photoemission study of EuO
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The electronic structure of the ferromagnetic semiconductor EuO is investigated by means of spin- and angle-resolved photoemission spectroscopy and density functional theory. Our spin-resolved data reveals that, while the macroscopic magnetization of the sample vanishes at the Curie temperature $T_C$, the experimentally-determined exchange splitting of the O 2$p$ band persists at least up to $T_{C}$ if the picture of fluctuating spin-blocks is assumed. We discuss possible temperature-related spectral changes by analyzing ferromagnetic and antiferromagnetic phases, directional effect due to spin orbit coupling, as well as effects due to sample aging. Our calculations with a Hubbard $U$ term reveal a complex nature of the local exchange splitting on the oxygen site and in conduction bands, shining a new light on the interpretation of previous optical and photoemission spectroscopic results.
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High quality thin films of the ferromagnetic semiconductor EuO have been prepared and were studied using a new form of spin-resolved spectroscopy. We observed large changes in the electronic structure across the Curie and metal-insulator transition temperature. We found that these are caused by the exchange splitting of the conduction band in the ferromagnetic state, which is as large as 0.6 eV. We also present strong evidence that the bottom of the conduction band consists mainly of majority spins. This implies that doped charge carriers in EuO are practically fully spin polarized.
Atomically flat interfaces between ternary oxides have chemically different variants, depending on the terminating lattice planes of both oxides. Electronic properties change with the interface termination which affects, for instance, charge accumulation and magnetic interactions at the interface. Well-defined terminations have yet rarely been achieved for oxides of ABO3 type (with metals A, B). Here, we report on a strategy of thin film growth and interface characterization applied to fabricate the La0.7Sr0.3MnO3-SrRuO3 interface with controlled termination. Ultra-strong antiferromagnetic coupling between the ferromagnets occurs at the MnO2-SrO interface, but not for the other termination, in agreement with density functional calculations. X-ray magnetic circular dichroism measurements reveal coupled reversal of Mn and Ru magnetic moments at the MnO2-SrO interface. Our results demonstrate termination control of magnetic coupling across a complex oxide interface and provide a pathway for theoretical and experimental explorations of novel electronic interface states with engineered magnetic properties.
We have studied the O 2p valence-band structure of Nb-doped SrTiO3, in which a dilute concentration of electrons are doped into the d0 band insulator, by angle-resolved photoemission spectroscopy (ARPES) measurements. We found that ARPES spectra at the valence band maxima at the M [k = (pi/a, pi/a, 0)]and R [k = (pi/a, pi/a, pi/a)] points start from ~ 3.3 eV below the Fermi level (EF), consistent with the indirect band gap of 3.3 eV and the EF position at the bottom of the conduction band. The peak position of the ARPES spectra were, however, shifted toward higher binding energies by ~ 500 meV from the 3.3 eV threshold. Because the bands at M and R have pure O 2p character, we attribute this ~ 500 meV shift to strong coupling of the oxygen p hole with optical phonons in analogy with the peak shifts observed for d-electron photoemission spectra in various transition-metal oxides.
The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.
We present a comparative, theoretical study of the doping dependence of the critical temperature $T_C$ of the ferromagnetic insulator-metal transition in Gd-doped and O-deficient EuO, respectively. The strong $T_C$ enhancement in Eu$_{1-x}$Gd$_x$O is due to Kondo-like spin fluctuations on the Gd sites, which are absent in EuO$_{1-x}$. Moreover, we find that the $T_C$ saturation in Eu$_{1-x}$Gd$_x$O for large $x$ is due to a reduced activation of dopant electrons into the conduction band, in agreement with experiments, rather than antiferromagnetic long-range contributions of the RKKY interaction. The results shed light on possibilities for further increasing $T_C$.
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