No Arabic abstract
The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics, bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2]. For virtually all crystalline materials macroscopic deformation is accommodated by the movement of dislocations and through the formation of twinning defects [3]; it is the geometry of the resulting microstructure that largely determines the mechanical and electronic properties. Despite this, the atomic microstructure of 2D materials after mechanical deformation has not been widely investigated: only by understanding these deformed microstructures can the resulting properties be accurately predicted and controlled. In this paper we describe the different structural features that can form as a result of bending in van der Waals (vdW) crystals of 2D materials. We show that twin boundaries, an important class of crystal defect, are delocalised by several nm and not atomically sharp as has been assumed for over half a century [4]. In addition, we demonstrate that different classes of microstructure are present in the deformed material and can be predicted from just the atomic structure, bend angle, and flake thickness. We anticipate that this new knowledge of the deformation structure for 2D materials will provide foundations for tailoring transport behaviour[2], mechanical properties, liquid-phase [5,6] and scotch-tape exfoliation [7,8], and crystal growth.
There have been conflicting reports on the electronic properties of twin domain boundaries (DBs) in MoSe2 monolayer, including the quantum well states, charge density wave, and Tomonaga-Luttinger liquid (TLL). Here we employ low-temperature scanning tunneling spectroscopy to reveal both the quantum confinement effect and signatures of TLL in the one-dimensional DBs. The data do not support the CDW at temperatures down to ~5 K.
We review recent progress on spins and magnetism in 2D materials including graphene, transition metal dichalcogenides, and 2D magnets. We also discuss challenges and prospects for the future of spintronics with 2D van der Waals heterostructures.
The search for one-dimensional (1D) topologically-protected electronic states has become an important research goal for condensed matter physics owing to their potential use in spintronic devices or as a building block for topologically non-trivial electronic states. Using low temperature scanning tunneling microscopy, we demonstrate the formation of 1D electronic states at twin boundaries at the surface of the noncentrosymmetric material BiPd. These twin boundaries are topological defects which separate regions with antiparallel orientations of the crystallographic textit{b} axis. We demonstrate that the formation of the 1D electronic states can be rationalized by a change in effective mass of two-dimensional surface states across the twin boundary. Our work therefore reveals a novel route towards designing 1D electronic states with strong spin-orbit coupling.
The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Flaws created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angle-adjustable transmission filter, simple optics and a CCD camera can capture spatially-dependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting.
Collective modes of doped two-dimensional crystalline materials, namely graphene, MoS$_2$ and phosphorene, both monolayer and bilayer structures, are explored using the density functional theory simulations together with the random phase approximation. The many-body dielectric functions of the materials are calculated using an {it ab initio} based model involving material-realistic physical properties. Having calculated the electron energy-loss, we calculate the collective modes of each material considering the in-phase and out-of-phase modes for bilayer structures. Furthermore, owing to many band structures and intreband transitions, we also find high-energy excitations in the systems. We explain that the material-specific dielectric function considering the polarizability of the crystalline material such as MoS$_2$ are needed to obtain realistic plasmon dispersions. For each material studied here, we find different collective modes and describe their physical origins.