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Register a new userMechanically tunable spontaneous vertical charge redistribution in few-layer WTe2
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Broken symmetry is the essence of exotic properties in condensed matters. Tungsten ditelluride, WTe$_2$, exceptionally takes a non-centrosymmetric crystal structure in the family of transition metal dichalcogenides, and exhibits novel properties$^{1-4}$, such as the nonsaturating magnetoresistance$^1$ and ferroelectric-like behavior$^4$. Herein, using the first-principles calculation, we show that unique layer stacking in WTe$_2$ generates surface dipoles with different strengths on the top and bottom surfaces in few-layer WTe$_2$. This leads to a layer-dependence for electron/hole carrier ratio and the carrier compensation responsible for the unusual magnetoresistance. The surface dipoles are tunable and switchable using the interlayer shear displacement. This could explain the ferroelectric-like behavior recently observed in atomically thin WTe$_2$ films$^4$. In addition, we reveal that exfoliation of the surface layer flips the out-of-plane spin textures. The presented results will aid in the deeper understanding, manipulation, and further exploration of the physical properties of WTe$_2$ and related atom-layered materials, for applications in electronics and spintronic devices.
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When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a potential of realizing new properties and functions that are unexpected in either bulk or simple monolayer. Multilayer WTe2 is one such example exhibiting unique ferroelectricity and non-linear transport properties related to the antiphase stacking and Berry-curvature dipole. Here we investigate the electronic band dispersions of multilayer WTe2 (2-5 layers), by performing laser-based micro-focused angle-resolved photoelectron spectroscopy on exfoliated-flakes that are strictly sorted by n and encapsulated by graphene. We clearly observed the insulator-semimetal transition occurring between 2- and 3-layers, as well as the 30-70 meV spin-splitting of valence bands manifesting in even n as a signature of stronger structural asymmetry. Our result fully demonstrates the possibility of the large energy-scale band and spin manipulation through the finite n stacking procedure.
The two-dimensional semiconductor MoS2 in its mono- and few-layer form is expected to have a significant exciton binding energy of several 100 meV, leading to the consensus that excitons are the primary photoexcited species. Nevertheless, even single layers show a strong photovoltaic effect and work as the active material in high sensitivity photodetectors, thus indicating efficient charge carrier photogeneration (CPG). Here we use continuous wave photomodulation spectroscopy to identify the optical signature of long-lived charge carriers and femtosecond pump-probe spectroscopy to follow the CPG dynamics. We find that intitial photoexcitation yields a branching between excitons and charge carriers, followed by excitation energy dependent hot exciton dissociation as an additional CPG mechanism. Based on these findings, we make simple suggestions for the design of more efficient MoS2 photovoltaic and photodetector devices.
There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micro-machined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet, in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4 %/$mu$m. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to an investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.
Reducing the lateral scale of two-dimensional (2D) materials to one-dimensional (1D) has attracted substantial research interest not only to achieve competitive electronic device applications but also for the exploration of fundamental physical properties. Controllable synthesis of high-quality 1D nanoribbons (NRs) is thus highly desirable and essential for the further study. Traditional exploration of the optimal synthesis conditions of novel materials is based on the trial-and-error approach, which is time consuming, costly and laborious. Recently, machine learning (ML) has demonstrated promising capability in guiding material synthesis through effectively learning from the past data and then making recommendations. Here, we report the implementation of supervised ML for the chemical vapor deposition (CVD) synthesis of high-quality 1D few-layered WTe2 nanoribbons (NRs). The synthesis parameters of the WTe2 NRs are optimized by the trained ML model. On top of that, the growth mechanism of as-synthesized 1T few-layered WTe2 NRs is further proposed, which may inspire the growth strategies for other 1D nanostructures. Our findings suggest that ML is a powerful and efficient approach to aid the synthesis of 1D nanostructures, opening up new opportunities for intelligent material development.
A quantum spin hall insulator(QSHI) is manifested by its conducting edge channels that originate from the nontrivial topology of the insulating bulk states. Monolayer 1T-WTe2 exhibits this quantized edge conductance in transport measurements, but because of its semimetallic nature, the coherence length is restricted to around 100 nm. To overcome this restriction, we propose a strain engineering technique to tune the electronic structure, where either a compressive strain along a axis or a tensile strain along b axis can drive 1T-WTe2 into an full gap insulating phase. A combined study of molecular beam epitaxy and in-situ scanning tunneling microscopy/spectroscopy then confirmed such a phase transition. Meanwhile, the topological edge states were found to be very robust in the presence of strain.
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