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Register a new userThree-terminal normal-superconductor junction as thermal transistor
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We propose a thermal transistor based on a three-terminal normal-superconductor (NS) junction with superconductor terminal acting as the base. The emergence of heat amplification is due to the negative differential thermal conductance (NDTC) effect for the NS diode in which the normal side maintains a higher temperature. The temperature dependent superconducting energy gap is responsible for the NDTC. By controlling quantum dot levels and their coupling strengths to the terminals, a huge heat amplification factor can be achieved. The setup offers an alternative tuning scheme of heat amplification factor and may find use in cryogenic applications.
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We present measurements of current noise and cross-correlations in three-terminal Superconductor-Normal metal-Superconductor (S-N-S) nanostructures that are potential solid-state entanglers thanks to Andreev reflections at the N-S interfaces. The noise correlation measurements spanned from the regime where electron-electron interactions are relevant to the regime of Incoherent Multiple Andreev Reflection (IMAR). In the latter regime, negative cross-correlations are observed in samples with closely-spaced junctions.
The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a pi-conjugated wire. The calculated results show the enhancement or depletion mode of a transistor by applying a gate field along the positive or negative direction. A small gate field is required to switch on the current in the proposed architecture. The changes in the electronic conduction can be attributed to the intrinsic dipolar molecular architecture in terms of the evolution of molecular wavefunctions, specifically the one associated with the terphenyl group of the modulating wire in the presence of the gate field.
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We fabricate three-terminal hybrid devices with a nanowire segment proximitized by a superconductor, and with two tunnel probe contacts on either side of that segment. We perform simultaneous tunneling measurements on both sides. We identify some states as delocalized above-gap states observed on both ends, and some states as localized near one of the tunnel barriers. Delocalized states can be traced from zero to finite magnetic fields beyond 0.5 T. In the parameter regime of delocalized states, we search for correlated subgap resonances required by the Majorana zero mode hypothesis. While both sides exhibit ubiquitous low-energy features at high fields, no correlation is inferred. Simulations using a one-dimensional effective model suggest that delocalized states may belong to lower one-dimensional subbands, while the localized states originate from higher subbands. To avoid localization in higher subbands, disorder may need to be further reduced to realize Majorana zero modes.
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