We study the peculiarities in current-phase relations (CPR) of the SIsFS junction in the region of $0$ to $pi $ transition. These CPR consist of two independent branches corresponding to $0-$ and $pi-$ states of the contact. We have found that depending on the transparency of the SIs tunnel barrier the decrease of the s-layer thickness leads to transformation of the CPR shape going in the two possible ways: either one of the branches exists only in discrete intervals of the phase difference $varphi$ or both branches are sinusoidal but differ in the magnitude of their critical currents. We demonstrate that the difference can be as large as $10%$ under maintaining superconductivity in the s layer. An applicability of these phenomena for memory and logic application is discussed.
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