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Register a new userTime-reversal invariant resonant backscattering on a topological insulator surface driven by a time-periodic gate voltage
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We study the scattering of the Dirac electrons by a point-like nonmagnetic impurity on the surface of a topological insulator, driven by a time-periodic gate voltage. It is found that, due to the doublet degenerate crossing points of different Floquet sidebands, resonant backscattering can happen for the surface electrons, even without breaking the time-reversal (TR) symmetry of the topological surface states (TSSs). The energy spectrum is reshuffled in a way quite different from that for the circularly polarized light, so that new features are exhibited in the Friedel oscillations of the local charge and spin density of states. Although the electron scattering is dramatically modified by the driving voltage, the $1/rho$ scale law of the spin precession persists for the TSSs. The TR invariant backscattering provides a possible way to engineer the Dirac electronic spectrum of the TSSs, without destroying the unique property of spin-momentum interlocking of the TSSs.
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Two-dimensional (2D) topological electronic insulators are known to give rise to gapless edge modes, which underlie low energy dynamics, including electrical and thermal transport. This has been thoroughly investigated in the context of quantum Hall phases, and time-reversal invariant topological insulators. Here we study the edge of a 2D, topologically trivial insulating phase, as a function of the strength of the electronic interactions and the steepness of the confining potential. For sufficiently smooth confining potentials, alternating compressible and incompressible stripes appear at the edge. Our findings signal the emergence of gapless edge modes which may give rise to finite conductance at the edge. This would suggest a novel scenario of a non-topological metal-insulator transition in clean 2D systems. The incompressible stripes appear at commensurate fillings and may exhibit broken translational invariance along the edge in the form of charge density wave ordering. These are separated by structureless compressible stripes.
We consider a model proposed before for a time-reversal-invariant topological superconductor (TRITOPS) which contains a hopping term $t$, a chemical potential $mu$, an extended $s$-wave pairing $Delta$ and spin-orbit coupling $lambda$. We show that for $|Delta|=|lambda|$, $mu=t=0$, the model can be solved exactly defining new fermion operators involving nearest-neighbor sites. The many-body ground state is four-fold degenerate due to the existence of two zero-energy modes localized exactly at the first and the last site of the chain. These four states show entanglement in the sense that creating or annihilating a zero-energy mode at the first site is proportional to a similar operation at the last site. By continuity, this property should persist for general parameters. Using these results we correct some statements related with the so called time-reversal anomaly. Addition of a small hopping term for a chain with an even number of sites breaks the degeneracy and the ground state becomes unique with an even number of particles. We also consider a small magnetic field applied to one end of the chain. We compare the many-body excitation energies and spin projection along the spin-orbit direction for both ends of the chains with numerical results %for a small chain obtaining good agreement.
We study transport across a time-dependent magnetic barrier present on the surface of a three-dimensional topological insulator. We show that such a barrier can be implemented for Dirac electrons on the surface of a three-dimensional topological insulator by a combination of a proximate magnetic material and linearly polarized external radiation. We find that the conductance of the system can be tuned by varying the frequency and amplitude of the radiation and the energy of an electron incident on the barrier providing us optical control on the conductance of such junctions. We first study a $delta$-function barrier which shows a number of interesting features such as sharp peaks and dips in the transmission at certain angles of incidence. Approximate methods for studying the limits of small and large frequencies are presented. We then study a barrier with a finite width. This gives rise to some new features which are not present for a $delta$-function barrier, such as resonances in the conductance at certain values of the system parameters. We present a perturbation theory for studying the limit of large driving amplitude and use this to understand the resonances. Finally, we use a semiclassical approach to study transmission across a time-dependent barrier and show how this can qualitatively explain some of the results found in the earlier analysis. We discuss experiments which can test our theory.
We consider a natural generalization of the lattice model for a periodic array of two layers, A and B, of spinless electrons proposed by Fu [Phys. Rev. Lett. 106, 106802 (2011)] as a prototype for a crystalline insulator. This model has time-reversal symmetry and broken inversion symmetry. We show that when the intralayer next-nearest-neighbor hoppings ta2, a = A, B vanish, this model supports a Weyl semimetal phase for a wide range of the remaining model parameters. When the effect of ta2 is considered, topological crystalline insulating phases take place within the Weyl semimetal one. By mapping to an effective Weyl Hamiltonian we derive some analytical results for the phase diagram as well as for the structure of the nodes in the spectrum of the Weyl semimetal.
Studying the influence of breaking time-reversal symmetry on topological insulator surface states is an important problem of current interest in condensed matter physics and could provide a route toward proof-of-concept spintronic devices that exploit spin-textured surface states. Here, we develop a new model system for studying the effect of breaking time-reversal symmetry: a hybrid heterostructure wherein a ferromagnetic semiconductor Ga1-xMnxAs, with an out-of-plane component of magnetization, is cleanly interfaced with a three-dimensional topological insulator (Bi,Sb)2(Te,Se)3 by molecular beam epitaxy. Lateral electrical transport in this bilayer is dominated by conduction through the topological insulator whose conductivity is a few orders of magnitude higher than that of the highly resistive ferromagnetic semiconductor with a low Mn concentration. Electrical transport measurements of a top-gated heterostructure device reveal a crossover from weak anti-localization (negative magneto-conductance) to weak localization (positive magneto-conductance) as the temperature is lowered or as the chemical potential approaches the Dirac point. This is accompanied by a systematic emergence of an anomalous Hall effect. These results are interpreted in terms of the opening of a gap at the Dirac point as a result of the exchange coupling between the topological insulator surface state and the ferromagnetic ordering in the Ga1-xMnxAs layer. Our study shows that this hybrid system is well suited to explore topological quantum phenomena and to realize proof-of-concept demonstrations of topological spintronic devices at cryogenic temperatures.
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