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Register a new userDepolarization of Electronic Spin Qubits Confined in Semiconductor Quantum Dots
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Quantum dots are arguably the best interface between matter spin qubits and flying photonic qubits. Using quantum dot devices to produce joint spin-photonic states requires the electronic spin qubits to be stored for extended times. Therefore, the study of the coherence of spins of various quantum dot confined charge carriers is important both scientifically and technologically. In this study we report on spin relaxation measurements performed on five different forms of electronic spin qubits confined in the very same quantum dot. In particular, we use all optical techniques to measure the spin relaxation of the confined heavy hole and that of the dark exciton - a long lived electron-heavy hole pair with parallel spins. Our measured results for the spin relaxation of the electron, the heavy-hole, the dark exciton, the negative and the positive trions, in the absence of externally applied magnetic field, are in agreement with a central spin theory which attributes the dephasing of the carriers spin to their hyperfine interactions with the nuclear spins of the atoms forming the quantum dots. We demonstrate that the heavy hole dephases much slower than the electron. We also show, both experimentally and theoretically, that the dark exciton dephases slower than the heavy hole, due to the electron-hole exchange interaction, which partially protects its spin state from dephasing.
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We show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a threshold-like enhancement or reduction of the local nuclear field by up to 3 Tesla can be generated by varying the intensity of light. The excitation power threshold for such a nuclear spin switch is found to depend on both external magnetic and electric fields. The switch is shown to arise from the strong feedback of the nuclear spin polarization on the dynamics of spin transfer from electrons to the nuclei of the dot.
We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($sim$0.05$, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger dot sizes that could ameliorate constraints on device fabrication. Compared to electrons in quantum dots, hole qubits do not suffer from the presence of nearby quantum levels (e.g., valley states) that can compete with spins as qubits. The strong spin-orbit coupling in Ge quantum wells may be harnessed to implement electric-dipole spin resonance, leading to gate times of several nanoseconds for single-qubit rotations. The microscopic mechanism of this spin-orbit coupling is discussed, along with its implications for quantum gates based on electric-dipole spin resonance, stressing the importance of coupling terms that arise from the underlying cubic crystal field. Our results provide a theoretical foundation for recent experimental advances in Ge hole-spin qubits.
We use temporally resolved intensity cross-correlation measurements to identify the biexciton-exciton radiative cascades in a negatively charged QD. The polarization sensitive correlation measurements show unambiguously that the excited two electron triplet states relax non-radiatively to their singlet ground state via a spin non conserving flip-flop with the ground state heavy hole. We explain this mechanism in terms of resonant coupling between the confined electron states and an LO phonon. This resonant interaction together with the electron-hole exchange interaction provides an efficient mechanism for this, otherwise spin-blockaded, electronic relaxation.
We study the spin dynamics in charged quantum dots in the situation where the resident electron is coupled to only about 200 nuclear spins and where the electron spin splitting induced by the Overhauser field does not exceed markedly the spectral broadening. The formation of a dynamical nuclear polarization as well as its subsequent decay by the dipole-dipole interaction is directly resolved in time. Because not limited by intrinsic nonlinearities, almost complete nuclear polarization is achieved, even at elevated temperatures. The data suggest a nonequilibrium mode of nuclear polarization, distinctly different from the spin temperature concept exploited on bulk semiconductors
In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disorder from electrical transport. This brief note is far from being exhaustive and should be considered a first introduction to the materials challenges and opportunities towards a larger spin qubit quantum processor.
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