No Arabic abstract
Recently published discoveries of acoustic and optical mode inversion in the phonon spectrum of certain metals became the first realistic example of non-interacting topological bosonic excitations in existing materials. However, the observable physical and technological use of such topological phonon phases remained unclear. In this work we provide a strong theoretical and numerical evidence that for a class of metallic compounds (known as triple point topological metals), the points in the phonon spectrum, at which three (two optical and one acoustic) phonon modes (bands) cross, represent a well-defined topological material phase, in which the hosting metals have very strong thermoelectric response. The triple point bosonic collective excitations appearing due to these topological phonon band-crossing points significantly suppress the lattice thermal conductivity, making such metals phonon-glass like. At the same time, the topological triple-point and Weyl fermionic quasiparticle excitations present in these metals yield good electrical transport (electron-crystal) and cause a local enhancement in the electronic density of states near the Fermi level, which considerably improves the thermopower. This combination of phonon-glass and electron-crystal is the key for high thermoelectric performance in metals. We call these materials topological thermoelectric metals and propose several newly predicted compounds for this phase (TaSb and TaBi). We hope that this work will lead researchers in physics and materials science to the detailed study of topological phonon phases in electronic materials, and the possibility of these phases to introduce novel and more efficient use of thermoelectric materials in many everyday technological applications.
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to $250~mathrm{cm^2/Vs}$ at $T=1.3~mathrm{K}$. SnSe is thus found to be a high quality, quasi two-dimensional semiconductor ideal for thermoelectric applications.
We discuss the phase dependent nonlocal thermoelectric effect in a topological Josephson junction in contact with a normal-metal probe. We show that, due to the helical nature of topological edge states, nonlocal thermoelectricity is generated by a purely Andreev interferometric mechanism. This response can be tuned by imposing a Josephson phase difference, through the application of a dissipationless current between the two superconductors, even without the need of applying an external magnetic field. We discuss in detail the origin of this effect and we provide also a realistic estimation of the nonlocal Seebeck coefficient that results of the order of few $mu V/K$.
In a joint theoretical and experimental investigation we show that a series of transition metals with strained body-centered cubic lattice ---W, Ta, Nb, and Mo--- host surface states that are topologically protected by mirror symmetry. Our finding extends the class of topologically nontrivial systems by topological crystalline transition metals. The investigation is based on independent calculations of the electronic structures and of topological invariants, the results of which agree with established properties of the Dirac-type surface state in W(110). To further support our prediction, we investigate both experimentally by spin-resolved inverse photoemission and theoretically an unoccupied topologically nontrivial surface state in Ta(110).
Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS$_{2-x}$Se$_x$ thermoelectric material. It is found that Se substitution effectively suppresses local distortion, that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials.
At present, topological insulators are the most efficient thermoelectric materials at room temperature. However, at non-zero temperatures, it seems to arise a conflict between having time-reversal symmetry, which implies minimal entropy, and the Seebeck coefficient, which is the entropy carried by each electric charge unit. This has obliged us to analyze the mathematical and physical background taking into account relativistic phonons besides the electrons within quantum field theory. In this search, we found an approximate expression for the intrinsic topological field b in terms of the Chern number, the Fermi velocity $v_F$ and the electron effective mass $m$, which allows to connect the topologically non-trivial insulator with the trivial one, being consistent with their topological properties and physical robustness. Thanks to this, we demonstrate that for three-dimensional topological insulators in thin-film conditions, among others, phonons have chirality coupling in a novel way to electron dynamics which preserves time-reversal symmetry. This explains the compatibility of the thermoelectricity within topological insulators and shows explicitly how it adapts to the family of topological insulators Bi$_2$Se$_3$.