No Arabic abstract
We address the question of how the time-resolved bulk Hall response of a two dimensional honeycomb lattice develops when driving the system with a pulsed perturbation. A simple toy model that switches a valley Hall signal by breaking inversion symmetry is studied in detail for slow quasi-adiabatic ramps and sudden quenches, obtaining an oscillating dynamical response that depends strongly on doping and time-averaged values that are determined both by the out of equilibrium occupations and the Berry curvature of the final states. On the other hand, the effect of irradiating the sample with a circularly-polarized infrared pump pulse that breaks time reversal symmetry and thus ramps the system into a non-trivial topological regime is probed. Even though there is a non quantized average signal due to the break down of the Floquet adiabatical picture, some features of the photon-dressed topological bands are revealed to be present even in a few femtosecond timescale. Small frequency oscillations during the transient response evidence the emergence of dynamical Floquet gaps which are consistent with the instantaneous amplitude of the pump envelope. On the other hand, a characteristic heterodyining effect is manifested in the model. The presence of a remnant Hall response for ultra-short pulses that contain only a few cycles of the radiation field is briefly discussed.
Ultrafast pump-probe technique is a powerful tool to understand and manipulate properties of materials for designing novel quantum devices. An intense, single cycle terahertz pulse can change the intrinsic properties of semiconductor quantum dots to have different luminescence. In a hybrid system of plasmon and exciton, the coherence and coupling between these two degrees of freedom play an important role on their optical properties. Therefore, we consider a terahertz pump optical probe experiment in the hybrid systems where the terahertz pump pulse couples to the exciton degrees of freedom on the quantum dot. The time resolved photoluminescence of the hybrid system shows that the response of the characteristic frequency shifts according to the overlap between the pump and probe pulses. Furthermore, the resonance between the exciton and plasmons can be induced by the terahertz pump pulse in some parameter regimes. Our results show the terahertz driven hybrid system can be a versatile tool for manipulating the material properties and open a new route to design modern optical devices.
The sample averaged longitudinal two-terminal conductance and the respective Kubo-conductivity are calculated at quantum critical points in the integer quantum Hall regime. In the limit of large system size, both transport quantities are found to be the same within numerical uncertainty in the lowest Landau band, $0.60pm 0.02 e^2/h$ and $0.58pm 0.03 e^2/h$, respectively. In the 2nd lowest Landau band, a critical conductance $0.61pm 0.03 e^2/h$ is obtained which indeed supports the notion of universality. However, these numbers are significantly at variance with the hitherto commonly believed value $1/2 e^2/h$. We argue that this difference is due to the multifractal structure of critical wavefunctions, a property that should generically show up in the conductance at quantum critical points.
Instability of quantum anomalous Hall (QAH) effect has been studied as function of electric current and temperature in ferromagnetic topological insulator thin films. We find that a characteristic current for the breakdown of the QAH effect is roughly proportional to the Hall-bar width, indicating that Hall electric field is relevant to the breakdown. We also find that electron transport is dominated by variable range hopping (VRH) at low temperatures. Combining the current and temperature dependences of the conductivity in the VRH regime, the localization length of the QAH state is evaluated to be about 5 $mu$m. The long localization length suggests a marginally insulating nature of the QAH state due to a large number of in-gap states.
The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for potential spintronics devices. One realization of these spin-orbit phenomena, the spin Hall effect (SHE), has been studied as a means of all-electrical spin current generation and spin separation in both semiconductor and metallic systems. Previous measurements of the spin Hall effect have focused on steady-state generation and time-averaged detection, without directly addressing the accumulation dynamics on the timescale of the spin coherence time. Here, we demonstrate time-resolved measurement of the dynamics of spin accumulation generated by the extrinsic spin Hall effect in a doped GaAs semiconductor channel. Using electrically-pumped time-resolved Kerr rotation, we image the accumulation, precession, and decay dynamics near the channel boundary with spatial and temporal resolution and identify multiple evolution time constants. We model these processes using time-dependent diffusion analysis utilizing both exact and numerical solution techniques and find that the underlying physical spin coherence time differs from the dynamical rates of spin accumulation and decay observed near the sample edges.
We discover a new topological excitation of two dimensional electrons in the quantum Hall regime. The strain dependence of resistivity is shown to change sign upon crossing filling-factor-specified boundaries of reentrant integer quantum Hall effect (RIQHE) states. This observation violates the known symmetry of electron bubbles thought to be responsible for the RIQHE. We demonstrate theoretically that electron bubbles become elongated in the vicinity of charge defects and form textures of finite size. Calculations confirm that texturing lowers the energy of excitations. These textures form hedgehogs (vortices) around defects having (lacking) one extra electron, resulting in striking strain-dependent resistivity that changes sign on opposite boundaries of the RIQHE. At low density these textures form an insulating Abrikosov lattice. At densities sufficient to cause the textures to overlap, their interactions are described by the XY-model and the lattice melts. This melting explains the sharp metal-insulator transition observed in finite temperature conductivity measurements.