No Arabic abstract
The transport properties of the surface charge carriers of a three dimensional topological insulator under a terahertz (THz) field along with a resonant double barrier structure is theoretically analyzed within the framework of Floquet theory to explore the possibility of using such a device for photodetection purpose. We show that due to the contribution of elastic and inelastic scattering processes in the resulting transmission sidebands are formed in the conductance spectrum in somewhat similar way as in an optical cavity and this information can be used to detect the frequency of an unknown THz radiation. The dependence of the conductance on the bias voltage, the effect of THz radiation on resonances and the influence of zero energy points on the transmission spectrum are also discussed.
3D topological insulators, similar to the Dirac material graphene, host linearly dispersing states with unique properties and a strong potential for applications. A key, missing element in realizing some of the more exotic states in topological insulators is the ability to manipulate local electronic properties. Analogy with graphene suggests a possible avenue via a topographic route by the formation of superlattice structures such as a moire patterns or ripples, which can induce controlled potential variations. However, while the charge and lattice degrees of freedom are intimately coupled in graphene, it is not clear a priori how a physical buckling or ripples might influence the electronic structure of topological insulators. Here we use Fourier transform scanning tunneling spectroscopy to determine the effects of a one-dimensional periodic buckling on the electronic properties of Bi2Te3. By tracking the spatial variations of the scattering vector of the interference patterns as well as features associated with bulk density of states, we show that the buckling creates a periodic potential modulation, which in turn modulates the surface and the bulk states. The strong correlation between the topographic ripples and electronic structure indicates that while doping alone is insufficient to create predetermined potential landscapes, creating ripples provides a path to controlling the potential seen by the Dirac electrons on a local scale. Such rippled features may be engineered by strain in thin films and may find use in future applications of topological insulators.
We investigate adiabatic quantum pumping of Dirac fermions on the surface of a strong 3D topological insulator. Two different geometries are studied in detail, a normal metal -- ferromagnetic -- normal metal (NFN) junction and a ferromagnetic -- normal metal -- ferromagnetic (FNF) junction. Using a scattering matrix approach, we first calculate the tunneling conductance and then the adiabatically pumped current using different pumping mechanisms for both types of junctions. We explain the oscillatory behavior of the conductance by studying the condition for resonant transmission in the junctions and find that each time a new resonant mode appears in the transport window, the pumped current diverges. We also predict an experimentally distinguishable difference between the pumped current and the rectified current.
We explore a combined effect of hexagonal warping and of finite effective mass on both the tunneling density of electronic states (TDOS) and structure of Landau levels (LLs) of 3D topological insulators. We find the increasing warping to transform the square-root van Hove singularity into a logarithmic one. For moderate warping an additional logarithmic singularity and a jump in the TDOS appear. This phenomenon is experimentally verified by direct measurements of the local TDOS in Bi$_2$Te$_3$. By combining the perturbation theory and the WKB approximation we calculate the LLs in the presence of hexagonal warping. We predict that due to the degeneracy removal the evolution of LLs in the magnetic field is drastically modified.
Hexagonal warping provides an anisotropy to the dispersion curves of the helical Dirac fermions that exist at the surface of a topological insulator. A sub-dominant quadratic in momentum term leads to an asymmetry between conduction and valence band. A gap can also be opened through magnetic doping. We show how these various modifications to the Dirac spectrum change the polarization function of the surface states and employ our results to discuss their effect on the plasmons. In the long wavelength limit, the plasmon dispersion retains its square root dependence on its momentum, $boldsymbol{q}$, but its slope is modified and it can acquire a weak dependence on the direction of $boldsymbol{q}$. Further, we find the existence of several plasmon branches, one which is damped for all values of $boldsymbol{q}$, and extract the plasmon scattering rate for a representative case.
The emerging field of spinoptronics has a potential to supersede the functionality of modern electronics, while a proper description of strong light-matter coupling pose the most intriguing questions from both fundamental scientific and technological perspectives. In this paper we address a highly relevant issue for such a development. We theoretically explore spin dynamics on the surface of a 3D topological insulator (TI) irradiated with an off-resonant high-frequency electromagnetic wave. The strong coupling between electrons and the electromagnetic wave drastically modifies the spin properties of TI. The effects of irradiation are shown to result in anisotropy of electron energy spectrum near the Dirac point and suppression of spin current and are investigated in detail in this work.