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Register a new userDirac-Surface-State Modulated Spin Dynamics in a Ferrimagnetic Insulator at Room Temperature
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This work demonstrates dramatically modified spin dynamics of magnetic insulator (MI) by the spin-momentum locked Dirac surface states of the adjacent topological insulator (TI) which can be harnessed for spintronic applications. As the Bi-concentration x is systematically tuned in 5 nm thick (BixSb1-x)2Te3 TI film, the weight of the surface relative to bulk states peaks at x = 0.32 when the chemical potential approaches the Dirac point. At this concentration, the Gilbert damping constant of the precessing magnetization in 10 nm thick Y3Fe5O12 MI film in the MI/TI heterostructures is enhanced by an order of magnitude, the largest among all concentrations. In addition, the MI acquires additional strong magnetic anisotropy that favors the in-plane orientation with similar Bi-concentration dependence. These extraordinary effects of the Dirac surface states distinguish TI from other materials such as heavy metals in modulating spin dynamics of the neighboring magnetic layer.
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We report an above-room-temperature ferromagnetic state realized in a proximitized Dirac semimetal, which is fabricated by growing typical Dirac semimetal Cd$_3$As$_2$ films on a ferromagnetic garnet with strong perpendicular magnetization. Observed anomalous Hall conductivity with substantially large Hall angles is found to be almost proportional to magnetization and opposite in sign to it. Theoretical calculations based on first-principles electronic structure also demonstrate that the Fermi-level dependent anomalous Hall conductivity reflects the Berry curvature originating in the split Weyl nodes. The present Dirac-semimetal/ferromagnetic-insulator heterostructure will provide a novel platform for exploring Weyl-node transport phenomena and spintronic functions lately proposed for topological semimetals.
The effect of the Fe-Ga ratio on the magnetic and electric properties of the multiferroic Ga2-xFexO3 compound has been studied in order to determine the composition range exhibiting magnetic and electric orders coexistence and their critical temperatures. A magnetoelectric phase diagram, showing the evolution of both the Neel magnetic ordering temperature and the electric ordering temperature, versus the iron content has been established for x values between 0.9 and 1.4. While the ferrimagnetic Neel temperature increases with the iron content, the electric ordering temperature shows an opposite trend. The electric polarization has been found to exist far above room temperature for the x value of 1.1 composition which shows the highest observed electric ordering temperature of approx. 580K. The compounds with x values of 1.3 and 1.4 are ferrimagnetic-electric relaxors with both properties coexisting at room temperature.
Topologically-protected surface states present rich physics and promising spintronic, optoelectronic and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of bulk carriers by combining photoexcitation with below-bandgap terahertz (THz) photons with TI samples with varying Fermi level, including one sample with the Fermi level located within the bandgap. We identify distinctly faster relaxation of charge carriers in the topologically-protected Dirac surface states (few hundred femtoseconds), compared to bulk carriers (few picoseconds). In agreement with such fast cooling dynamics, we observe THz harmonic generation without any saturation effects for increasing incident fields, unlike graphene which exhibits strong saturation. This opens up promising avenues for increased THz nonlinear conversion efficiencies, and high-bandwidth optoelectronic and spintronic information and communication applications.
Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment coupled electronic states have been extensively pursued to realize efficient spin-orbit torque (SOT) switching. However, so far current-induced magnetic switching with TI has only been observed at cryogenic temperatures. It remains a controversial issue whether the topologically protected electronic states in TI could benefit spintronic applications at room temperature. In this work, we report full SOT switching in a TI/ferromagnet bilayer heterostructure with perpendicular magnetic anisotropy at room temperature. The low switching current density provides a definitive proof on the high SOT efficiency from TI. The effective spin Hall angle of TI is determined to be several times larger than commonly used heavy metals. Our results demonstrate the robustness of TI as an SOT switching material and provide a direct avenue towards applicable TI-based spintronic devices.
Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a spin locked perpendicularly to it in the surface plane. While the principal spin generation capability of topological insulators is well established, comparatively little is known about the interaction of the spins with external stimuli like polarized light. We observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi2Te2Se platelets for perpendicular incidence of light. The same edges exhibit also a finite bias-dependent Kerr angle, indicative of spin accumulation induced by a transversal spin Hall effect in the bulk states of the Bi2Te2Se platelets. A symmetry analysis shows that the helical photoconductance is distinct to common longitudinal photoconductance and photocurrent phenomena, but consistent with the accumulated spins being transported in the side facets of the platelets. Our findings demonstrate that spin effects in the facets of 3D topological insulators can be addressed and read-out in optoelectronic devices even at room temperatures.
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