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Register a new userQuantum oscillations in flux-grown SmB6 with embedded aluminum
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SmB6 is a candidate topological Kondo insulator that displays surface conduction at low temperatures. Here, we perform torque magnetization measurements as a means to detect de Haas-van Alphen (dHvA) oscillations in SmB6 crystals grown by aluminum flux. We find that dHvA oscillations occur in single crystals containing embedded aluminum, originating from the flux used to synthesize SmB6. Measurements on a sample with multiple, unconnected aluminum inclusions show that aluminum crystallizes in a preferred orientation within the SmB6 cubic lattice. The presence of aluminum is confirmed through bulk susceptibility measurements, but does not show a signature in transport measurements.
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Recent theoretical and experimental findings suggest that the long-known but not well understood low temperature resistance plateau of SmB6 may originate from protected surface states arising from a topologically non-trivial bulk band structure having strong Kondo hybridization. Yet other studies have ascribed this feature to impurity phases, sample vacancies, and surface reconstructions. Given the typical methods used to prepare SmB6 single crystals, the flux and floating zone procedures, these ascriptions should not be taken lightly. Here, we demonstrate how compositional variations and observable amounts of impurity phases in SmB6 crystals grown by floating zone and flux affect the physical properties. From neutron diffraction and X-ray computed tomography experiments, we observe that a 154Sm11B6 crystal prepared using aluminum flux contains co-crystallized, epitaxial aluminum. A large, nearly stoichiometric crystal of SmB6 was successfully grown using the float-zone technique; upon continuing the zone melting, samarium vacancies are introduced. These samarium vacancies drastically alter the resistance and plateauing magnitude of the low temperature resistance compared to stoichiometric SmB6. These results highlight that small presences of impurity phases and compositional variations must be considered when collecting and analyzing physical property data of SmB6. Finally, a more accurate samarium-154 coherent neutron scattering length value, 8.9(1) fm, is reported.
The mixed valent compound SmB6 is of high current interest as the first candidate example of topologically protected surface states in a strongly correlated insulator and also as a possible host for an exotic bulk many-body state that would manifest properties of both an insulator and a metal. Two different de Haas van Alphen (dHvA) experiments have each supported one of these possibilities, while angle resolved photoemission spectroscopy (ARPES) for the (001) surface has supported the first, but without quantitative agreement to the dHvA results. We present new ARPES data for the (110) surface and a new analysis of all published dHvA data and thereby bring ARPES and dHvA into substantial consistency around the basic narrative of two dimensional surface states.
SmB6 is a promising candidate material that promises to elucidate the connection between strong correlations and topological electronic states, which is a major challenge in condensed matter physics. The electron correlations are responsible for the development of multiple gaps in SmB6, whose elucidation is sorely needed. Here we do so by studying the evolutions of the gaps and other corresponding behaviors under pressure. Our measurements of the valence, Hall effect and electrical resistivity clearly identify the gap which is associated with the bulk Kondo hybridization and, moreover, uncover a pressure-induced quantum phase transition from the putative topological Kondo insulating state to a Fermi-liquid state at ~4 GPa. We provide the evidences for the transition by a jump of inverse Hall coefficient, a diverging tendency of the electron-electron scattering coefficient and, thereby, a destruction of the Kondo entanglement in the ground state. These effects take place in a mixed-valence background. Our results raise the new prospect for studying topological electronic states in quantum critical materials settings.
Topological semimetals are systems in which the conduction and the valence bands cross each other and this crossing is protected by topological constraints. These materials provide an intriguing test of fundamental theory and their exceptional physical properties promise a wide range of possible applications. Here we report a study of the thermoelectric power (S) for a single crystal of ZrSiS that is believed to be a topological nodal-line semimetal. We detect multiple quantum oscillations in the magnetic field dependence of S that are still visible at temperature as high as T = 100 K. Two of these oscillation frequencies are shown to arise from 3D and 2D bands, each with linear dispersion and the additional Berry phase expected theoretically.
We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arises from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. We consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB$_6$.
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