Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userIntrinsic valley Hall transport in atomically thin MoS2
104
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from different valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here, we report the first observation of intrinsic valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2, evidenced by considerable nonlocal resistance that scales cubically with local resistance. Such a hallmark survives even at room temperature with a valley diffusion length at micron scale. By contrast, no valley Hall signal is observed in the centrosymmetric bilayer MoS2. Our work elucidates the topological quantum origin of valley Hall effects and marks a significant step towards the purely electrical control of valley degree of freedom in topological valleytronics.
rate research
Read More
Spin-orbit coupling is a fundamental mechanism that connects the spin of a charge carrier with its momentum. Likewise, in the optical domain, a synthetic spin-orbit coupling is accessible, for instance, by engineering optical anisotropies in photonic materials. Both, akin, yield the possibility to create devices directly harnessing spin- and polarization as information carriers. Atomically thin layers of transition metal dichalcogenides provide a new material platform which promises intrinsic spin-valley Hall features both for free carriers, two-particle excitations (excitons), as well as for photons. In such materials, the spin of an exciton is closely linked to the high-symmetry point in reciprocal space it emerges from. Here, we demonstrate, that spin, and hence valley selective propagation is accessible in an atomically thin layer of MoSe2, which is strongly coupled to a microcavity photon mode. We engineer a wire-like device, where we can clearly trace the flow, and the helicity of exciton-polaritons expanding along a channel. By exciting a coherent superposition of K and K- tagged polaritons, we observe valley selective expansion of the polariton cloud without neither any applied external magnetic fields nor coherent Rayleigh scattering. Unlike the valley Hall effect for TMDC excitons, the observed optical valley Hall effect (OVHE) strikingly occurs on a macroscopic scale, and clearly reveals the potential for applications in spin-valley locked photonic devices.
Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D materials can host point-like centers with inherent confinement to a sub-nm plane. However, previous attempts to truly deterministically control spatial position and spectral homogeneity while maintaining the 2D character have not been realized. Here, we demonstrate the on-demand creation and precise positioning of single-photon sources in atomically thin MoS2 with very narrow ensemble broadening and near-unity fabrication yield. Focused ion beam irradiation creates 100s to 1000s of mono-typical atomistic defects with anti-bunched emission lines with sub-10 nm lateral and 0.7 nm axial positioning accuracy. Our results firmly establish 2D materials as a scalable platform for single-photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.
While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of information. In transition metal dichalcogenide (TMD) monolayers, where spin-valley locking is present, strong retention of valley chirality has been reported for MoS$_2$, WSe$_2$ and WS$_2$ while MoSe$_2$ shows anomalously low valley polarisation retention. In this work, chiral selectivity of MoSe$_2$ cavity polaritons under helical excitation is reported with a polarisation degree that can be controlled by the exciton-cavity detuning. In contrast to the very low circular polarisation degrees seen in MoSe$_2$ exciton and trion resonances, we observe a significant enhancement of up to 7 times when in the polaritonic regime. Here, polaritons introduce a fast decay mechanism which inhibits full valley pseudospin relaxation and thus allows for increased retention of injected polarisation in the emitted light. A dynamical model applicable to cavity-polaritons in any TMD semiconductor, reproduces the detuning dependence through the incorporation of the cavity-modified exciton relaxation, allowing an estimate of the spin relaxation time in MoSe$_2$ which is an order of magnitude faster than those reported in other TMDs. The valley addressable exciton-polaritons reported here offer robust valley polarised states demonstrating the prospect of valleytronic devices based upon TMDs embedded in photonic structures, with significant potential for valley-dependent nonlinear polariton-polariton interactions.
Van der Waals heterostructures have recently emerged as a new class of materials, where quantum coupling between stacked atomically thin two-dimensional (2D) layers, including graphene, hexagonal-boron nitride, and transition metal dichalcogenides (MX2), give rise to fascinating new phenomena. MX2 heterostructures are particularly exciting for novel optoelectronic and photovoltaic applications, because 2D MX2 monolayers can have an optical bandgap in the near-infrared to visible spectral range and exhibit extremely strong light-matter interactions. Theory predicts that many stacked MX2 heterostructures form type-II semiconductor heterojunctions that facilitate efficient electron-hole separation for light detection and harvesting. Here we report the first experimental observation of ultrafast charge transfer in photo-excited MoS2/WS2 heterostructures using both photoluminescence mapping and femtosecond (fs) pump-probe spectroscopy. We show that hole transfer from the MoS2 layer to the WS2 layer takes place within 50 fs after optical excitation, a remarkable rate for van der Waals coupled 2D layers. Such ultrafast charge transfer in van der Waals heterostructures can enable novel 2D devices for optoelectronics and light harvesting.
We measured the work of separation of single and few-layer MoS2 membranes from a SiOx substrate using a mechanical blister test, and found a value of 220 +- 35 mJ/m^2. Our measurements were also used to determine the 2D Youngs modulus of a single MoS2 layer to be 160 +- 40 N/m. We then studied the delamination mechanics of pressurized MoS2 bubles, demonstrating both stable and unstable transitions between the bubbles laminated and delaminated states as the bubbles were inflated. When they were deflated, we observed edge pinning and a snap-in transition which are not accounted for by the previously reported models. We attribute this result to adhesion hysteresis and use our results to estimate the work of adhesion of our membranes to be 42 +- 20 mJ/m^2.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
