No Arabic abstract
To reduce material and processing costs of commercial permanent magnets and to attempt to fill the empty niche of energy products, 10 - 20 MGOe, between low-flux (ferrites, alnico) and high-flux (Nd2Fe14B- and SmCo5-type) magnets, we report synthesis, structure, magnetic properties and modeling of Ta, Cu and Fe substituted CeCo5. Using a self-flux technique, we grew single crystals of I - Ce15.1Ta1.0Co74.4Cu9.5, II - Ce16.3Ta0.6Co68.9Cu14.2, III - Ce15.7Ta0.6Co67.8Cu15.9, IV - Ce16.3Ta0.3Co61.7Cu21.7 and V - Ce14.3Ta1.0Co62.0Fe12.3Cu10.4. X-ray diffraction analysis (XRD) showed that these materials retain a CaCu5 substructure and incorporate small amounts of Ta in the form of dumb-bells, filling the 2e crystallographic sites within the 1D hexagonal channel with the 1a Ce site, whereas Co, Cu and Fe are statistically distributed among the 2c and 3g crystallographic sites. Scanning electron microscopy, energy dispersive X-ray spectroscopy (SEM-EDS) and scanning transmission electron microscopy (STEM) examinations provided strong evidence of the single-phase nature of the as-grown crystals, even though they readily exhibited significant magnetic coercivitie of ~1.6 - ~1.8 kOe caused by Co-enriched, nano-sized, structural defects and faults that can serve as pinning sites. Formation of the composite crystal during the heat treatment creates a 3D array of extended defects within a primarily single grain single crystal, which greatly improves its magnetic characteristics. Possible causes of the formation of the composite crystal may be associated with Ta atoms leaving matrix interstices at lower temperatures and/or matrix degradation induced by decreased miscibility at lower temperatures. Fe strongly improves both the Curie temperature and magnetization of the system resulting in (BH)max:~13 MGOe at room temperature.
This paper describes the open Novamag database that has been developed for the design of novel Rare-Earth free/lean permanent magnets. The database software technologies, its friendly graphical user interface, advanced search tools and available data are explained in detail. Following the philosophy and standards of Materials Genome Initiative, it contains significant results of novel magnetic phases with high magnetocrystalline anisotropy obtained by three computational high-throughput screening approaches based on a crystal structure prediction method using an Adaptive Genetic Algorithm, tetragonally distortion of cubic phases and tuning known phases by doping. Additionally, it also includes theoretical and experimental data about fundamental magnetic material properties such as magnetic moments, magnetocrystalline anisotropy energy, exchange parameters, Curie temperature, domain wall width, exchange stiffness, coercivity and maximum energy product, that can be used in the study and design of new promising high-performance Rare-Earth free/lean permanent magnets. The results therein contained might provide some insights into the ongoing debate about the theoretical performance limits beyond Rare-Earth based magnets. Finally, some general strategies are discussed to design possible experimental routes for exploring most promising theoretical novel materials found in the database.
Low-temperature MnBi (hexagonal NiAs phase) exhibits anomalies in the lattice constants (a, c) and bulk elastic modulus (B) below 100 K, spin reorientation and magnetic susceptibility maximum near 90 K, and, importantly for high-temperature magnetic applications, an increasing coercivity (unique to MnBi) above 180 K. We calculate the total energy and magneto-anisotropy energy (MAE) versus (a, c) using DFT+U methods. We reproduce and explain all the above anomalies. We predict that coercivity and MAE increase due to increasing a, suggesting means to improve MnBi permanent magnets.
We investigate analytically the anisotropic dielectric properties of single crystal {alpha}-SnS near the fundamental absorption edge by considering atomic orbitals. Most striking is the excitonic feature in the armchair- (b-) axis direction, which is particularly prominent at low temperatures. To determine the origin of this anisotropy, we perform first-principles calculations using the GW0 Bethe-Salpeter equation (BSE) including the electron-hole interaction. The results show that the anisotropic dielectric characteristics are a direct result of the natural anisotropy of p orbitals. In particular, this dominant excitonic feature originates from the py orbital at the saddle point in the {Gamma}-Y region.
Co4Nb2O9 (CNO) having {alpha}-Al2O3 crystal structure with Co chains along c-direction shows gigantic magnetoelelctric coupling below antiferromagnetic ordering temperature of 27 K but above a spin flop field of 1.6 T. We have investigated structural, magnetic and magnetoelectric properties of Fe substituted (10% and 20%) samples and compared with the parent one. In fact magnetic and specific heat measurements have revealed an additional magnetic transition below 10 K and presence of short range magnetic ordering above ~ 50 K in parent as well as in Fe substituted samples. Linear magnetoelelctric and ferroelectric behaviours are evidenced in the Fe substituted samples where an electric field of 5 kV/m is sufficient to align the dipoles and the magnetoelelctric coupling is ensured for magnetic fields as low as 0.25 T, far below the spin flop field.
The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21) MA/cm2 in W (Ta)/Co60Fe40(t_CoFe)/TiN structures whose origin lies in the epitaxial interfaces. These structures also exhibit very low spin memory loss and high spin mixing conductance. These extraordinary values of SHA and therefore ultra-low J_Crit in semiconducting industry compatible epitaxial materials combinations open up a new direction for the realization of energy efficient spin logic devices by utilizing epitaxial interfaces.