The increasing need to store large amounts of information with an ultra-dense, reliable, low power and low cost memory device is driving aggressive efforts to improve upon current perpendicular magnetic recording technology. However, the difficulties in fabricating small grain recording media while maintaining thermal stability and a high signal-to-noise ratio motivate development of alternative methods, such as the patterning of magnetic nano-islands and utilizing energy-assist for future applications. In addition, both from sensor and memory perspective three-dimensional spintronic devices are highly desirable to overcome the restrictions on the functionality in the planar structures. Here we demonstrate a three-dimensional magnetic-memory (magnetic page memory) based on thermally assisted and stray-field induced transfer of domains in a vertical stack of magnetic nanowires with perpendicular anisotropy. Using spin-torque induced domain shifting in such a device with periodic pinning sites provides additional degrees of freedom by allowing lateral information flow to realize truly three-dimensional integration.
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