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Register a new userNonlocal hydrodynamic phonon transport in two-dimensional materials
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We study hydrodynamic phonon heat transport in two-dimensional (2D) materials. Starting from the Peierls-Boltzmann equation within the Callaway model, we derive a 2D Guyer-Krumhansl-like equation describing non-local hydrodynamic phonon transport, taking into account the quadratic dispersion of flexural phonons. In additional to Poiseuille flow, second sound propagation, the equation predicts heat current vortices and negative nonlocal thermal conductance in 2D materials, common in classical fluid but scarcely considered in phonon transport. Our results also illustrate the universal transport behavior of hydrodynamics, independent on the type of quasi-particles and their microscopic interactions.
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In this work, the heat vortexes in two-dimensional porous or ribbon structures are investigated based on the phonon Boltzmann transport equation (BTE) under the Callaway model. First, the separate thermal effects of normal (N) scattering and resistive (R) scattering are investigated with frequency-independent assumptions. And then the heat vortexes in graphene are studied as a specific example. It is found that the heat vortexes can appear in both ballistic (rare R/N scattering) and hydrodynamic (N scattering dominates) regimes but disappear in the diffusive (R scattering dominates) regime. As long as there is not sufficient R scattering, the heat vortexes can appear in present simulations.
Extreme confinement of electromagnetic energy by phonon polaritons holds the promise of strong and new forms of control over the dynamics of matter. To bring such control to the atomic-scale limit, it is important to consider phonon polaritons in two-dimensional (2D) systems. Recent studies have pointed out that in 2D, splitting between longitudinal and transverse optical (LO and TO) phonons is absent at the $Gamma$ point, even for polar materials. Does this lack of LO--TO splitting imply the absence of a phonon polariton in polar monolayers? Here, we derive a first-principles expression for the conductivity of a polar monolayer specified by the wavevector-dependent LO and TO phonon dispersions. In the long-wavelength (local) limit, we find a universal form for the conductivity in terms of the LO phonon frequency at the $Gamma$ point, its lifetime, and the group velocity of the LO phonon. Our analysis reveals that the phonon polariton of 2D is simply the LO phonon of the 2D system. For the specific example of hexagonal boron nitride (hBN), we estimate the confinement and propagation losses of the LO phonons, finding that high confinement and reasonable propagation quality factors coincide in regions which may be difficult to detect with current near-field optical microscopy techniques. Finally, we study the interaction of external emitters with two-dimensional hBN nanostructures, finding extreme enhancement of spontaneous emission due to coupling with localized 2D phonon polaritons, and the possibility of multi-mode strong and ultra-strong coupling between an external emitter and hBN phonons. This may lead to the design of new hybrid states of electrons and phonons based on strong coupling.
We study nonlocal resistance in an H-shaped two-dimensional HgTe/CdTe quantum well consist of injector and detector, both of which can be tuned in the quantum spin Hall or metallic spin Hall regime. Because of strong spin-orbit interaction, there always exist spin Hall effect and the nonlocal resistance in HgTe/CdTe quantum well. We find that when both detector and injector are in the quantum spin Hall regime, the nonlocal resistance is quantized at $0.25frac{h}{e^2}$, which is robust against weak disorder scattering and small magnetic field. While beyond this regime, the nonlocal resistance decreases rapidly and will be strongly suppressed by disorder and magnetic field. In the presence of strong magnetic field, the quantum spin Hall regime will be switched into the quantum Hall regime and the nonlocal resistance will disappear. The nonlocal signal and its various manifestation in different hybrid regimes originate from the special band structure of HgTe/CdTe quantum well, and can be considered as the fingerprint of the helical quantum spin Hall edge states in two-dimensional topological insulator.
We review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years. Topological insulators are finding applications in magnetic devices, while Hall transport in doped samples and the general issue of topological protection remain controversial. In transition metal dichalcogenides valley-dependent electrical and optical phenomena continue to stimulate state-of-the-art experiments. In Weyl semimetals the properties of Fermi arcs are being actively investigated. A new field, expected to grow in the near future, focuses on the non-linear electrical and optical responses of topological materials, where fundamental questions are once more being asked about the intertwining roles of the Berry curvature and disorder scattering. In topological superconductors the quest for chiral superconductivity, Majorana fermions and topological quantum computing is continuing apace.
Layered materials have uncommonly anisotropic thermal properties due to their strong in-plane covalent bonds and weak out-of-plane van der Waals interactions. Here we examine heat flow in graphene (graphite), h-BN, MoS2, and WS2 monolayers and bulk films, from diffusive to ballistic limits. We determine the ballistic thermal conductance limit (Gball) both in-plane and out-of-plane, based on full phonon dispersions from first-principles calculations. An overall phonon mean free path ({lambda}) is expressed in terms of Gball and the diffusive thermal conductivity, consistent with kinetic theory if proper averaging of phonon group velocity is used. We obtain a size-dependent thermal conductivity k(L) in agreement with available experiments, and find that k(L) only converges to >90% of the diffusive thermal conductivity for sample sizes L > 16{lambda}, which ranges from ~140 nm for MoS2 cross-plane to ~10 um for suspended graphene in-plane. These results provide a deeper understanding of microscopic thermal transport, revealing that device scales below which thermal size effects should be taken into account are generally larger than previously thought.
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