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VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new two-dimensional compound that has no bulk analogue. The transition is reversible upon annealing in an H2S gas atmosphere. We report the structural properties of both the stoichiometric and S-depleted compounds on the basis of low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and scanning tunneling microscopy experiments.
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Single-layer superconductors are ideal materials for fabricating superconducting nano devices. However, up to date, very few single-layer elemental superconductors have been predicted and especially no one has been successfully synthesized yet. Here, using crystal structure search techniques and ab initio calculations, we predict that a single-layer planar carbon sheet with 4- and 8-membered rings called T-graphene is a new intrinsic elemental superconductor with superconducting critical temperature (Tc) up to around 20.8 K. More importantly, we propose a synthesis route to obtain such a single-layer T-graphene, that is, a T-graphene potassium intercalation compound (C4K with P4/mmm symmetry) is firstly synthesized at high pressure (>11.5GPa) and then quenched to ambient condition; and finally, the single-layer T-graphene can be either exfoliated using the electrochemical method from the bulk C4K, or peeled off from bulk T-graphite C4, where C4 can be obtained from C4K by evaporating the K atoms. Interestingly, we find that the calculated Tc of C4K is about 30.4K at 0GPa, which sets a new record for layered carbon-based superconductors. The present findings add a new class of carbon based superconductors. In particular, once the single-layer T-graphene is synthesized, it can pave the way for fabricating superconducting devices together with other 2D materials using the layer-by-layer growth techniques.
Recently, superconductivity in potassium (K) doped p-terphenyl (C18H14) has been suggested by the possible observation of the Meissner effect and subsequent photoemission spectroscopy measurements, but the detailed lattice structure and more-direct evidence are still lacking. Here we report a low temperature scanning tunneling microscopy/spectroscopy (STM/STS) study on K-doped single layer p-terphenyl films grown on Au (111). We observe several ordered phases with different morphologies and electronic behaviors, in two of which a sharp and symmetric low-energy gap of about 11 meV opens below 50 K. In particular, the gap shows no obvious response to a magnetic field up to 11 Tesla, which would caution against superconductivity as an interpretation in previous reports of K-doped p-terphenyl materials. Such gapped phases are rarely (if ever) observed in single layer hydrocarbon molecular crystals. Our work also paves the way for fabricating doped two-dimensional (2D) hydrocarbon materials, which will provide a platform to search for novel emergent phenomena.
Single-layer atom or vacancy clusters in the presence of electromigration are studied theoretically assuming an isotropic medium. A variety of distinctive behaviors distinguish the response in the three standard limiting cases of periphery diffusion (PD), terrace diffusion (TD), and evaporation-condensation (EC). A general model provides power laws describing the size dependence of the drift velocity in these limits, consistent with established results in the case of PD. The validity of the widely used quasistatic limit is calculated. Atom and vacancy clusters drift in opposite directions in the PD limit but in the same direction otherwise. In absence of PD, linear stability analysis reveals a new type of morphological instability, not leading to island break-down. For strong electromigration, Monte Carlo simulations show that clusters then destabilize into slits, in contrast to splitting in the PD limit. Electromigration affects the diffusion coefficient of the cluster and morphological fluctuations, the latter diverging at the instability threshold. An instrinsic attachment-detachment bias displays the same scaling signature as PD in the drift velocity.
Prediction of stable crystal structures at given pressure-temperature conditions, based only on the knowledge of the chemical composition, is a central problem of condensed matter physics. This extremely challenging problem is often termed crystal structure prediction problem, and recently developed evolutionary algorithm USPEX (Universal Structure Predictor: Evolutionary Xtallography) made an important progress in solving it, enabling efficient and reliable prediction of structures with up to ~40 atoms in the unit cell using ab initio methods. Here we review this methodology, as well as recent progress in analyzing energy landscape of solids (which also helps to analyze results of USPEX runs). We show several recent applications - (1) prediction of new high-pressure phases of CaCO3, (2) search for the structure of the polymeric phase of CO2 (phase V), (3) high-pressure phases of oxygen, (4) exploration of possible stable compounds in the Xe-C system at high pressures, (5) exotic high-pressure phases of elements boron and sodium.
A surface layer (skin) that is functionally and structurally different from the bulk was found in single crystals of BiFeO3. Impedance analysis indicates that a previously reported anomaly at T* ~ 275 pm 5 ^/circC corresponds to a phase transition confined at the surface of BiFeO3. X-ray photoelectron spectroscopy and X-ray diffraction as a function of both incidence angle and photon wavelength unambiguously confirm the existence of a skin with an estimated skin depth of few nanometres, elongated out-of-plane lattice parameter, and lower electron density. Temperature-dependent x-ray diffraction has revealed that the skins out of plane lattice parameter changes abruptly at T*, while the bulk preserves an unfeatured linear thermal expansion. The distinct properties of the skin are likely to dominate in large surface to volume ratios scenarios such as fine grained ceramics and thin films, and should be particularly relevant for electronic devices that rely on interfacial couplings such as exchange bias.
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