Do you want to publish a course? Click here

Electron-mediated phonon-phonon coupling drives the vibrational relaxation of CO on Cu(100)

78   0   0.0 ( 0 )
 Added by Dino Novko
 Publication date 2018
  fields Physics
and research's language is English




Ask ChatGPT about the research

We bring forth a consistent theory for the electron-mediated vibrational intermode coupling that clarifies the microscopic mechanism behind the vibrational relaxation of adsorbates on metal surfaces. Our analysis points out the inability of state-of-the-art nonadiabatic theories to quantitatively reproduce the experimental linewidth of the CO internal stretch mode on Cu(100) and it emphasizes the crucial role of the electron-mediated phonon-phonon coupling in this regard. The results demonstrate a strong electron-mediated coupling between the internal stretch and low-energy CO modes, but also a significant role of surface motion. Our nonadiabatic theory is also able to explain the temperature dependence of the internal stretch phonon linewidth, thus far considered a sign of the direct anharmonic coupling.



rate research

Read More

We present a combined density-functional-perturbation-theory and inelastic neutron scattering study of the lattice dynamical properties of YNi2B2C. In general, very good agreement was found between theory and experiment for both phonon energies and line widths. Our analysis reveals that the strong coupling of certain low energy modes is linked to the presence of large displacements of the light atoms, i.e. B and C, which is unusual in view of the rather low phonon energies. Specific modes exhibiting a strong coupling to the electronic quasiparticles were investigated as a function of temperature. Their energies and line widths showed marked changes on cooling from room temperature to just above the superconducting transition at Tc = 15.2 K. Calculations simulating the effects of temperature allow to model the observed temperature dependence qualitatively.
We estimate the spin relaxation rate due to spin-orbit coupling and acoustic phonon scattering in weakly-confined quantum dots with up to five interacting electrons. The Full Configuration Interaction approach is used to account for the inter-electron repulsion, and Rashba and Dresselhaus spin-orbit couplings are exactly diagonalized. We show that electron-electron interaction strongly affects spin-orbit admixture in the sample. Consequently, relaxation rates strongly depend on the number of carriers confined in the dot. We identify the mechanisms which may lead to improved spin stability in few electron (>2) quantum dots as compared to the usual one and two electron devices. Finally, we discuss recent experiments on triplet-singlet transitions in GaAs dots subject to external magnetic fields. Our simulations are in good agreement with the experimental findings, and support the interpretation of the observed spin relaxation as being due to spin-orbit coupling assisted by acoustic phonon emission.
228 - Richard Wilson , Sinisa Coh 2019
Understanding how photoexcited electron dynamics depend on electron-electron (e-e) and electron-phonon (e-p) interaction strengths is important for many fields, e.g. ultrafast magnetism, photocatalysis, plasmonics, and others. Here, we report simple expressions that capture the interplay of e-e and e-p interactions on electron distribution relaxation times. We observe a dependence of the dynamics on e-e and e-p interaction strengths that is universal to most metals and is also counterintuitive. While only e-p interactions reduce the total energy stored by excited electrons, the time for energy to leave the electronic subsystem also depends on e-e interaction strengths because e-e interactions increase the number of electrons emitting phonons. The effect of e-e interactions on energy-relaxation is largest in metals with strong e-p interactions. Finally, the time high energy electron states remain occupied depends only on the strength of e-e interactions, even if e-p scattering rates are much greater than e-e scattering rates.
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $lambda$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of $lambda$ for the upper and lower spin-split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS$_2$. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS$_2$ on Au(111). The fact that the absolute valence band maximum in single-layer MoS$_2$ at K is almost degenerate with the local valence band maximum at $Gamma$ can potentially be used to tune the strength of the electron-phonon interaction in this material.
We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers generation, the speed of electron-phonon relaxation, rates of inter-band recombination and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy tail covers largely the conduction band. The shape of the high-energy tail strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi tail is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can affect essentially the charge transport in the irradiated and highly doped semiconductors.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا