Electronic and mechanical properties of few-layer borophene

We report first principle calculations of electronic and mechanical properties of few-layer borophene with the inclusion of interlayer van der Waals (vdW) interaction. The anisotropic metallic behaviors are preserved from monolayer to few-layer structures. The energy splitting of bilayer borophene at $Gamma$ point near the Fermi level is about 1.7 eV, much larger than the values (0.5--1 eV) of other layered semiconductors, indicating much stronger vdW interactions in metallic layered borophene. In particular, the critical strains are enhanced by increasing the number of layers, leading to much more flexibility than that of monolayer structure. On the one hand, because of the buckled atomic structures, the out-of-plane negative Poissons ratios are preserved as the layer-number increases. On the other hand, we find that the in-plane negative Poissons ratios disappear in layered borophene, which is very different from puckered black phosphorus. The negative Poissons ratio will recover if we enlarge the interlayer distance to 6.3 $mboxAA$, indicating that the physical origin behind the change of Poissons ratios is the strong interlayer vdW interactions in layered borophene.