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Register a new userBright electroluminescence from single graphene nanoribbon junctions
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Thanks to their highly tunable band gaps, graphene nanoribbons (GNRs) with atomically precise edges are emerging as mechanically and chemically robust candidates for nanoscale light emitting devices of modulable emission color. While their optical properties have been addressed theoretically in depth, only few experimental studies exist, limited to ensemble measurements and without any attempt to integrate them in an electronic-like circuit. Here we report on the electroluminescence of individual GNRs suspended between the tip of a scanning tunneling microscope (STM) and a Au(111) substrate, constituting thus a realistic opto-electronic circuit. Emission spectra of such GNR junctions reveal a bright and narrow band emission of red light, whose energy can be tuned with the bias voltage applied to the junction, but always lying below the gap of infinite GNRs. Comparison with {it ab initio} calculations indicate that the emission involves electronic states localized at the GNR termini. Our results shed light on unpredicted optical transitions in GNRs and provide a promising route for the realization of bright, robust and controllable graphene-based light emitting devices.
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We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.
We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrodinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and doping effects strongly influence the transport properties, giving rise to conductance asymmetries and a selective suppression of the subband formation. Junction electrostatics and p-type characteristics drive the conduction mechanism in the case of high work function Au, Pd and Pt electrodes, while contact resistance becomes dominant in the case of Al.
Graphene nanoribbons (GNRs) based T junctions were designed and studied in this paper. These junctions were made up of shoulders (zigzag GNRs) joined with stems (armchair GNRs). We demonstrated the intrinsic transport properties and effective boron (or nitrogen) doping of the junctions by using first principles quantum transport simulation. Several interesting results were found: i) The I-V characteristics of the pure-carbon T junctions were shown to obey Ohm law and the electrical conductivity of the junction depends on the height of the stem sensitively. ii) boron (or nitrogen) doping on the stems doesnt change the Ohm law of the T junctions, but the result is opposite when doping process occurs at the shoulders. This feature could make such quasi-2D T junction a possible candidate for nanoscale junction devices in a 2D network of nanoelectronic devices in which conducting pathways can be controlled.
The decay dynamics of excited carriers in graphene have attracted wide scientific attention, as the gapless Dirac electronic band structure opens up relaxation channels that are not allowed in conventional materials. We report Fermi-level-dependent mid-infrared emission in graphene originating from a previously unobserved decay channel: hot plasmons generated from optically excited carriers. The observed Fermi-level dependence rules out Planckian light emission mechanisms and is consistent with the calculated plasmon emission spectra in photoinverted graphene. Evidence for bright hot plasmon emission is further supported by Fermi-level-dependent and polarization-dependent resonant emission from graphene plasmonic nanoribbon arrays under pulsed laser excitation. Spontaneous plasmon emission is a bright emission process as our calculations for our experimental conditions indicate that the spectral flux of spontaneously generated plasmons is several orders of magnitude higher than blackbody emission at a temperature of several thousand Kelvin. In this work, it is shown that a large enhancement in radiation efficiency of graphene plasmons can be achieved by decorating graphene surface with gold nanodisks, which serve as out-coupling scatterers and promote localized plasmon excitation when they are resonant with the incoming excitation light. These observations set a framework for exploration of ultrafast and ultrabright mid-infrared emission processes and light sources.
As a critical way to modulate thermal transport in nanostructures, phonon resonance hybridization has become an issue of great concern in the field of phonon engineering. In this work, we optimized phonon transport across graphene nanoribbon and obtained minimized thermal conductance by means of designing pillared nanostructures based on resonance hybridization. Specifically, the optimization of thermal conductance was performed by the combination of atomic Green` s function and Bayesian optimization. Interestingly, it is found that thermal conductance decreases non-monotonically with the increasing of number for pillared structure, which is severed as resonator and blocks phonon transport. Further mode-analysis and atomic Green` s function calculations revealed that the anomalous tendency originates from decreased phonon transmission in a wide frequency range. Additionally, nonequilibrium molecular dynamics simulations are performed to verify the results with the consideration of high-order phonon scattering. This finding provides novel insights into the control of phonon transport in nanostructures.
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