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Layer-wise synapse optimization for implementing neural networks on general neuromorphic architectures

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 Added by John Mern
 Publication date 2018
and research's language is English




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Deep artificial neural networks (ANNs) can represent a wide range of complex functions. Implementing ANNs in Von Neumann computing systems, though, incurs a high energy cost due to the bottleneck created between CPU and memory. Implementation on neuromorphic systems may help to reduce energy demand. Conventional ANNs must be converted into equivalent Spiking Neural Networks (SNNs) in order to be deployed on neuromorphic chips. This paper presents a way to perform this translation. We map the ANN weights to SNN synapses layer-by-layer by forming a least-square-error approximation problem at each layer. An optimal set of synapse weights may then be found for a given choice of ANN activation function and SNN neuron. Using an appropriate constrained solver, we can generate SNNs compatible with digital, analog, or hybrid chip architectures. We present an optimal node pruning method to allow SNN layer sizes to be set by the designer. To illustrate this process, we convert three ANNs, including one convolutional network, to SNNs. In all three cases, a simple linear program solver was used. The experiments show that the resulting networks maintain agreement with the original ANN and excellent performance on the evaluation tasks. The networks were also reduced in size with little loss in task performance.



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This work reports a compact behavioral model for gated-synaptic memory. The model is developed in Verilog-A for easy integration into computer-aided design of neuromorphic circuits using emerging memory. The model encompasses various forms of gated synapses within a single framework and is not restricted to only a single type. The behavioral theory of the model is described in detail along with a full list of the default parameter settings. The model includes parameters such as a devices ideal set time, threshold voltage, general evolution of the conductance with respect to time, decay of the devices state, etc. Finally, the models validity is shown via extensive simulation and fitting to experimentally reported data on published gated-synapses.
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