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Register a new userIntrinsic spin-orbit torque arising from Berry curvature in metallic-magnet/Cu-oxide interface
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We report the observation of the intrinsic damping-like spin-orbit torque (SOT) arising from the Berry curvature in metallic-magnet/CuO$_x$ heterostructures. We show that a robust damping-like SOT, an order of magnitude larger than a field-like SOT, is generated in the heterostructure despite the absence of the bulk spin-orbit effect in the CuO$_x$ layer. Furthermore, by tuning the interface oxidation level, we demonstrate that the field-like SOT changes drastically and even switches its sign, which originates from oxygen modulated spin-dependent disorder. These results provide an important information for fundamental understanding of the physics of the SOTs.
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Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electrical switching in an antiferromagnetic memory at room temperature. When the inversion-partner sites are occupied by different atoms, a non-zero global spin-polarization is generated by the applied current which can switch a ferromagnet, as reported at low temperatures in the diluted magnetic semiconductor (Ga,Mn)As. Here we demonstrate the effect of the global current-induced spin polarization in a counterpart crystal-symmetry material NiMnSb which is a member of the broad family of magnetic Heusler compounds. It is an ordered high-temperature ferromagnetic metal whose other favorable characteristics include high spin-polarization and low damping of magnetization dynamics. Our experiments are performed on strained single-crystal epilayers of NiMnSb grown on InGaAs. By performing all-electrical ferromagnetic resonance measurements in microbars patterned along different crystal axes we detect room-temperature spin-orbit torques generated by effective fields of the Dresselhaus symmetry. The measured magnitude and symmetry of the current-induced torques are consistent with our relativistic density-functional theory calculations.
Spin-orbit torques due to interfacial Rashba and spin Hall effects have been widely considered as a potentially more efficient approach than the conventional spin-transfer torque to control the magnetization of ferromagnets. We report a comprehensive study of spin-orbit torque efficiency in Ta(O)/Ni81Fe19 bilayers by tuning low-oxidation of b{eta}-phase tantalum, and find that the spin Hall angle {theta}DL increases from ~ -0.18 of the pure Ta/Py to the maximum value ~ -0.30 of Ta(O)/Py with 7.8% oxidation. Furthermore, we distinguish the efficiency of the spin-orbit torque generated by the bulk spin Hall effect and by interfacial Rashba effect, respectively, via a series of Py/Cu(0-2 nm)/Ta(O) control experiments. The latter has more than twofold enhancement, and even more significant than that of the former at the optimum oxidation level. Our results indicate that 65% enhancement of the efficiency should be related to the modulation of the interfacial Rashba-like spin-orbit torque due to oxygen-induced orbital hybridization cross the interface. Our results suggest that the modulation of interfacial coupling via oxygen-induced orbital hybridization can be an alternative method to boost the change-spin conversion rate.
Quantum states induced by single-atomic-impurities are the current frontier of material and information science. Recently the spin-orbit coupled correlated kagome magnets are emerging as a new class of topological quantum materials, although the effect of single-atomic impurities remains unexplored. Here we use state-of-the-art scanning tunneling microscopy/spectroscopy (STM/S) to study the atomic indium impurity in a topological kagome magnet Co3Sn2S2, which is designed to support the spin-orbit quantum state. We find each impurity features a strongly localized bound state. Our systematic magnetization-polarized tunneling probe reveals its spin-down polarized nature with an unusual moment of -5uB, indicative of additional orbital magnetization. As the separation between two impurities progressively shrinks, their respective bound states interact and form quantized molecular orbital states. The molecular orbital of three neighboring impurities further exhibits an intriguing splitting owing to the combination of geometry, magnetism, and spin-orbit coupling, analogous to the splitting of the topological Weyl fermion line12,19. Our work demonstrates the quantum-level interplay between magnetism and spin-orbit coupling at an individual atomic impurity, which provides insights into the emergent impurity behavior in a topological kagome magnet and the potential of spin-orbit quantum impurities for information science.
The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin currents absorbed in the FM. We exploit the large spin absorption at the Ru interface to manipulate the SOTs in HM/FM/Ru multilayers. While the FM thickness is smaller than its spin dephasing length of 1.2 nm, the top Ru layer largely boosts the absorption of spin currents into the FM layer and substantially enhances the strength of SOT acting on the FM. Spin-pumping experiments induced by ferromagnetic resonance support our conclusions that the observed increase in the SOT efficiency can be attributed to an enhancement of the spin-current absorption. A theoretical model that considers both reflected and transmitted mixing conductances at the two interfaces of FM is developed to explain the results.
Quantum states induced by single-atomic impurities are at the frontier of physics and material science. While such states have been reported in high-temperature superconductors and dilute magnetic semiconductors, they are unexplored in topological magnets which can feature spin-orbit tunability. Here we use spin-polarized scanning tunneling microscopy/spectroscopy (STM/S) to study the engineered quantum impurity in a topological magnet Co3Sn2S2. We find that each substituted In impurity introduces a striking localized bound state. Our systematic magnetization-polarized probe reveals that this bound state is spin-down polarized, in lock with a negative orbital magnetization. Moreover, the magnetic bound states of neighboring impurities interact to form quantized orbitals, exhibiting an intriguing spin-orbit splitting, analogous to the splitting of the topological fermion line. Our work collectively demonstrates the strong spin-orbit effect of the single-atomic impurity at the quantum level, suggesting that a nonmagnetic impurity can introduce spin-orbit coupled magnetic resonance in topological magnets.
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