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Register a new userLarge intravalley scattering due to pseudo-magnetic fields in crumpled graphene
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The pseudo-magnetic field generated by mechanical strain in graphene can have dramatic consequences on the behavior of electrons and holes. Here we show that pseudo-magnetic field fluctuations present in crumpled graphene can induce significant intravalley scattering of charge carriers. We detect this by measuring the confocal Raman spectra of crumpled areas, where we observe an increase of the D/D peak intensity ratio by up to a factor of 300. We reproduce our observations by numerical calculation of the double resonant Raman spectra and interpret the results as experimental evidence of the phase shift suffered by Dirac charge carriers in the presence of a pseudo-magnetic field. This lifts the restriction on complete intravalley backscattering of Dirac fermions.
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Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of valleytronics one seeks to coherently manipulate the valley index. Here we show that reflection from a superlattice potential can provide a valley switch: Electrons approaching a pristine-graphene--superlattice-graphene interface near normal incidence are reflected in the opposite valley. We identify the topological origin of this valley switch, by mapping the problem onto that of Andreev reflection from a topological superconductor, with the electron-hole degree of freedom playing the role of the valley index. The valley switch is ideal at a symmetry point of the superlattice potential, but remains close to 100% in a broad parameter range.
The magnetic-field dependence of the energy spectrum, wave function, binding energy and oscillator strength of exciton states confined in a circular graphene quantum dot (CGQD) are obtained within the configuration interaction (CI) method. We predict that: (1) excitonic effects are very significant in the CGQD as a consequence of a combination of geometric confinement, magnetic confinement and reduced screening; (2) two types of excitons (intravalley and intervalley excitons) are present in the CGQD because of the valley degree of freedom in graphene; (3) the intravalley and intervalley exciton states display different magnetic-field dependencies due to the different electron-hole symmetries of the single-particle energy spectra; (4) with increasing magnetic field, the exciton ground state in the CGQD undergoes an intravalley to intervalley transition accompanied by a change of angular momentum; (5) the exciton binding energy does not increase monotonically with the magnetic field due to the competition between geometric and magnetic confinements; and (6) the optical transitions of the intervalley and intravalley excitons can be tuned by the magnetic field and valley-dependent excitonic transitions can be realized in CGQD.
The remarkable properties of graphene are inherent to its 2D honeycomb lattice structure. Its low dimensionality, which makes it possible to rearrange the atoms by applying an external force, offers the intriguing prospect of mechanically controlling the electronic properties. In the presence of strain, graphene develops a pseudo-magnetic field (PMF) which reconstructs the band structure into pseudo Landau levels (PLLs). However, a feasible route to realizing, characterizing and controlling PMFs is still lacking. Here we report on a method to generate and characterize PMFs in a graphene membrane supported on nano-pillars. A direct measure of the local strain is achieved by using the magnifying effect of the Moire pattern formed against a hexagonal Boron Nitride (hBN) substrate under scanning tunneling microscopy (STM). We quantify the strain induced PMF through the PLLs spectra observed in scanning tunneling spectroscopy (STS). This work provides a pathway to strain induced engineering and electro-mechanical graphene based devices.
Hybrid superconductor/graphene (SC/g) junctions are excellent candidates for investigating correlations between Cooper pairs and quantum Hall (QH) edge modes. Experimental studies are challenging as Andreev reflections are extremely sensitive to junction disorder and high magnetic fields are required to form QH edge states. We fabricated low-resistance SC/g interfaces, composed of graphene edge contacted with NbN with a barrier strength of $Zapprox 0.4$, that remain superconducting under magnetic fields larger than $18$ T. We establish the role of graphenes Dirac band structure on zero-field Andreev reflections and demonstrate dynamic tunability of the Andreev reflection spectrum by moving the boundary between specular and retro Andreev reflections with parallel magnetic fields. Through the application of perpendicular magnetic fields, we observe an oscillatory suppression of the 2-probe conductance in the $ u = 4$ Landau level attributed to the reduced efficiency of Andreev processes at the NbN/g interface, consistent with theoretical predictions.
Two opposite chiralities of Dirac electrons in a 2D graphene sheet modify the Friedel oscillations strongly: electrostatic potential around an impurity in graphene decays much faster than in 2D electron gas. At distances $r$ much larger than the de Broglie wavelength, it decays as $1/r^3$. Here we show that a weak uniform magnetic field affects the Friedel oscillations in an anomalous way. It creates a field-dependent contribution which is {em dominant} in a parametrically large spatial interval $p_0^{-1}lesssim rlesssim k_Fl^2$, where $l$ is the magnetic length, $k_F$ is Fermi momentum and $p_0^{-1}=(k_Fl)^{4/3}/k_F$. Moreover, in this interval, the field-dependent oscillations do not decay with distance. The effect originates from a spin-dependent magnetic phase accumulated by the electron propagator. The obtained phase may give rise to novel interaction effects in transport and thermodynamic characteristics of graphene and graphene-based heterostructures.
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