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Register a new userStrain Mapping of Two-Dimensional Heterostructures with Sub-Picometer Precision
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Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable strain, dislocations, or ripples, which can strongly affect their mechanical, optical, and electronic properties. We have developed an approach to map 2D heterojunction lattice and strain profiles with sub-picometer precision and to identify dislocations and out-of-plane ripples. We collected diffraction patterns from a focused electron beam for each real-space scan position with a high-speed, high dynamic range, momentum-resolved detector - the electron microscope pixel array detector (EMPAD). The resulting four-dimensional (4D) phase space datasets contain the full spatially resolved lattice information of the sample. By using this technique on tungsten disulfide (WS2) and tungsten diselenide (WSe2) lateral heterostructures, we have mapped lattice distortions with 0.3 pm precision across multi-micron fields of view and simultaneously observed the dislocations and ripples responsible for strain relaxation in 2D laterally-epitaxial structures.
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2D materials offer an ideal platform to study the strain fields induced by individual atomic defects, yet challenges associated with radiation damage have so-far limited electron microscopy methods to probe these atomic-scale strain fields. Here, we demonstrate an approach to probe single-atom defects with sub-picometer precision in a monolayer 2D transition metal dichalcogenide, WSe$_{2-2x}$Te$_{2x}$. We utilize deep learning to mine large datasets of aberration-corrected scanning transmission electron microscopy images to locate and classify point defects. By combining hundreds of images of nominally identical defects, we generate high signal-to-noise class-averages which allow us to measure 2D atomic coordinates with up to 0.3 pm precision. Our methods reveal that Se vacancies introduce complex, oscillating strain fields in the WSe$_{2-2x}$Te$_{2x}$ lattice which cannot be explained by continuum elastic theory. These results indicate the potential impact of computer vision for the development of high-precision electron microscopy methods for beam-sensitive materials.
While digital electronics has become entirely ubiquitous in todays world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital counterparts - pushed for research into alternative materials. In recent years two-dimensional materials have received considerable research interest, fitting their promising properties for future electronics. In this work we demonstrate an operational amplifier - a basic building block of analogue electronics - using a two-dimensional semiconductor, namely molybdenum disulfide, as active material. Our device is capable of stable operation with good performance, and we demonstrate its use in feedback circuits such as inverting amplifiers, integrators, log amplifiers, and transimpedance amplifiers.
Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic protons. Modern electronics based on semiconductors - even those specially designed for radiation hardness - remain highly susceptible to proton damage. Here we demonstrate that room temperature (RT) charge-density-wave (CDW) devices with quasi-two-dimensional (2D) 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 10^14 H+cm^2. Current-voltage I-V characteristics of these 2D CDW devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other 2D devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these all-metallic CDW devices can be attributed to their two-terminal design, quasi-2D nature of the active channel, and high concentration of charge carriers in the utilized CDW phases. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.
With recent advances in dynamic scanning probe microscopy techniques, it is now a routine to image the sub-molecular structure of molecules with atomically-engineered tips which are prepared via controlled modification of the tip termination and are chemically well-defined. The enhanced spatial resolution is possible as atomically-engineered tips can preserve their integrity in the repulsive interaction regime. Although the mechanism of improved spatial resolution has been investigated both experimentally and theoretically, the ultimate temporal resolution while preserving picometer scale spatial resolution still remains an open question. Here, we computationally analyze the temporal resolution of atomic force microscopy imaging with atomically-engineered tips. Our computational results reveal that non-metal terminated tips, e.g. oxygen-terminated copper, are well-suited for enhanced temporal resolution up to video rate imaging velocities while preserving picometer range spatial resolution. Contrarily, the highest-attainable spatial resolution of atomically-engineered tips with low-stiffness, e.g. CO-terminated, deteriorate with increasing imaging velocity. Our results reveal that when atomically-engineered tips terminated with molecules are in use, imaging velocities in the order of nanometers per second at most are inevitable even for atomically flat surfaces to retain atomic resolution and avoid slip-stick motion. In addition to shedding light on the temporal resolution of atomic force microscopy imaging with atomically-engineered tips, our numerical results provide an outlook to the scalability of atom-by-atom fabrication using scanning probe microscopy techniques.
Defect-free monolayers of graphene and hexagonal boron nitride were previously shown to be surprisingly permeable to thermal protons, despite being completely impenetrable to all gases. It remains untested whether small ions can permeate through the two-dimensional crystals. Here we show that mechanically exfoliated graphene and hexagonal boron nitride exhibit perfect Nernst selectivity such that only protons can permeate through, with no detectable flow of counterions. In the experiments, we used suspended monolayers that had few if any atomic-scale defects, as shown by gas permeation tests, and placed them to separate reservoirs filled with hydrochloric acid solutions. Protons accounted for all the electrical current and chloride ions were blocked. This result corroborates the previous conclusion that thermal protons can pierce defect-free two-dimensional crystals. Besides importance for theoretical developments, our results are also of interest for research on various separation technologies based on two-dimensional materials.
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