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Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

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 Added by Giuseppina Conti
 Publication date 2018
  fields Physics
and research's language is English




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Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with angstrom precision. We determined that: i) the exposure to air induced the formation of an InAsO$_4$ layer on top of the stoichiometric InAs(QM); ii) the top interface between the air-side InAsO$_4$ and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; iii) the bottom interface between the InAs(QM) and the native oxide SiO$_2$ on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO$_2$/(Si/Mo) substrate was determined by HXPS. The value of $VBO = 0.2 pm 0.04$ eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO$_2$ heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.



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The specific heat of ultra-thin free-standing membranes is calculated using the elastic continuum model. We first obtain the dispersion relations of the discrete set of acoustic modes in the system. The specific heat is then calculated by summing over the discrete out-of-plane wavevector component and integrating over the continuous in-plane wavevector of these waves. In the low-temperature regime (T < 4 K), the flexural polarization is seen to have the highest contribution to the total specific heat. This leads to a linear dependence with temperature, resulting in a larger specific heat for the membrane compared to that of the bulk counterpart
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