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Register a new userPyrolytic Graphite Sheet, a New Adsorption Substrate for Superfluid Thin Films
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Added by
Sachiko Nakamura Dr.
Publication date
2018
fields
Physics
and research's language is
English
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We have measured surface morphology and gas adsorption characteristics of uncompressed pyrolytic graphite sheet (uPGS) which is a candidate substrate for AC and DC superflow experiments on monolayers of 4He below T = 1 K. The PGS is a mass-produced thin graphite sheet with various thicknesses between 10 and 100 {mu}m. We employed a variety of measuring techniques such as imagings with optical microscope, SEM and STM, Raman spectroscopy, and adsorption isotherm. PGS has smooth and atomically-flat external surfaces with high crystallinity. Although the specific surface area (<0.1 m$^2$/g) is rather small, by making use of its smooth external surface, the thinnest uPGS of 10 {mu}m thick is found to be suitable for the superflow experiments on the strictly two-dimensional helium systems.
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We have made thermal and electrical transport measurements of uncompressed pyrolytic graphite sheet (uPGS), a mass-produced thin graphite sheet with various thicknesses between 10 and 100 {mu}m, at temperatures between 2 and 300 K. Compared to exfoliated graphite sheets like Grafoil, uPGS has much higher conductivities by an order of magnitude because of its high crystallinity confirmed by X-ray diffraction and Raman spectroscopy. This material is advantageous as a thermal link of light weight in a wide temperature range particularly above 60 K where the thermal conductivity is much higher than common thermal conductors such as copper and aluminum alloys. We also found a general relationship between thermal and electrical conductivities in graphite-based materials which have highly anisotropic conductivities. This would be useful to estimate thermal conductance of a cryogenic part made of these materials from its electrical conductance more easily measurable at low temperature.
This paper reports the synthesis and detailed characterization of graphite thin films produced by thermal decomposition of the (0001) face of a 6H-SiC wafer, demonstrating the successful growth of single crystalline films down to approximately one graphene layer. The growth and characterization were carried out in ultrahigh vacuum (UHV) conditions. The growth process and sample quality were monitored by low-energy electron diffraction, and the thickness of the sample was determined by core level x-ray photoelectron spectroscopy. High-resolution angle-resolved photoemission spectroscopy shows constant energy map patterns, which are very sharp and fully momentum-resolved, but nonetheless not resolution limited. We discuss the implications of this observation in connection with scanning electron microscopy data, as well as with previous studies.
This paper has been withdrawn by the author
A simple and effective stepwise-method has been developed to remove defects from the top graphene layers of highly orientated pyrolytic graphite. Using a combination of ozone exposure and moderately high temperature we have shown that a defect-rich graphite surface can be modified to generate a graphene-like surface containing a negligible amount of oxygen, hydrogen and sp3 carbon. We report definitive x-ray photoelectron and x-ray absorption spectroscopy analysis after each stage of the process, suggest a mechanism by which the modification occurs and propose it as a route towards the preparation or manipulation of pristine graphene samples.
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors.
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