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Register a new userExcitonic Instability and Pseudogap Formation in Nodal Line Semimetal ZrSiS
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Electron correlation effects are studied in ZrSiS using a combination of first-principles and model approaches. We show that basic electronic properties of ZrSiS can be described within a two-dimensional lattice model of two nested square lattices. High degree of electron-hole symmetry characteristic for ZrSiS is one of the key features of this model. Having determined model parameters from first-principles calculations, we then explicitly take electron-electron interactions into account and show that at moderately low temperatures ZrSiS exhibits excitonic instability, leading to the formation of a pseudogap in the electronic spectrum. The results can be understood in terms of Coulomb-interaction-assisted pairing of electrons and holes reminiscent to that of an excitonic insulator. Our finding allows us to provide a physical interpretation to the unusual mass enhancement of charge carriers in ZrSiS recently observed experimentally.
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ZrSiS has recently gained attention due to its unusual electronic properties: nearly perfect electron-hole compensation, large, anisotropic magneto-resistance, multiple Dirac nodes near the Fermi level, and an extremely large range of linear dispersion of up to 2 eV. We have carried out a series of high pressure electrical resistivity measurements on single crystals of ZrSiS. Shubnikov-de Haas measurements show two distinct oscillation frequencies. For the smaller orbit, we observe a change in the phase of 0.5, which occurs between 0.16 - 0.5 GPa. This change in phase is accompanied by an abrupt decrease of the cross-sectional area of this Fermi surface. We attribute this change in phase to a possible topological quantum phase transition. The phase of the larger orbit exhibits a Berry phase of pi and remains roughly constant up to 2.3 GPa. Resistivity measurements to higher pressures show no evidence for pressure-induced superconductivity to at least 20 GPa.
We instigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. This material has recently revealed an intriguing butterfly-shaped in-plane AMR that is not well understood. Our measurements of the polar out-of-plane AMR show a surprisingly different response with a pronounced cusp-like feature. The maximum of the cusp-like anisotropy is reached when the magnetic field is oriented in the $a$-$b$ plane. Moreover, the AMR for the azimuthal out-of-plane current direction exhibits a very strong four-fold $a$-$b$ plane anisotropy. Combining the Fermi surfaces calculated from first principles with the Boltzmanns semiclassical transport theory we reproduce and explain all the prominent features of the unusual behavior of the in-plane and out-of-plane AMR. We are also able to clarify the origin of the strong non-saturating transverse magnetoresistance as an effect of imperfect charge-carrier compensation and open orbits. Finally, by combining our theoretical model and experimental data we estimate the average relaxation time of $2.6times10^{-14}$~s and the mean free path of $15$~nm at 1.8~K in our samples of ZrSiS.
We present the topology of spin-split Fermi surface of CaAgAs as determined by de Haas-van Alphen (dHvA) effect measurements combined with ab initio calculations. We have determined the torus-shaped nodal-line Fermi surface from the dHvA oscillations of $beta$ and $gamma$ orbits. The former orbit encircles the nodal-line, while the latter does not. Nevertheless, a nontrivial Berry phase is found for both orbits. The nontrivial phase of $beta$ arises from the orbital characters, which can be expressed as a pseudospin rotating around the nodal-line. On the other hand, the phase of $gamma$ is attributed to the vortex of real spin texture induced by an antisymmetric spin-orbit interaction. Our result demonstrates that both the real- and pseudo-spin textures are indispensable in interpreting the electronic topology in noncentrosymmetric nodal-line semimetals.
In nodal-line semimetals linearly dispersing states form Dirac loops in the reciprocal space, with high degree of electron-hole symmetry and almost-vanishing density of states near the Fermi level. The result is reduced electronic screening and enhanced correlations between Dirac quasiparticles. Here we investigate the electronic structure of ZrSiSe, by combining time- and angle-resolved photoelectron spectroscopy with ab initio density functional theory (DFT) complemented by an extended Hubbard model (DFT +U +V). We show that electronic correlations are reduced on an ultrashort timescale by optical excitation of high-energy electrons-hole pairs, which transiently screen the Coulomb interaction. Our findings demonstrate an all-optical method for engineering the band structure of a quantum material.
Nodal semimetals are a unique platform to explore topological signatures of the unusual band structure that can manifest by accumulating a nontrivial phase in quantum oscillations. Here we report a study of the de Haasvan Alphen oscillations of the candidate topological nodal line semimetal CaAgAs using torque measurements in magnetic fields up to 45 T. Our results are compared with calculations for a toroidal Fermi surface originating from the nodal ring. We find evidence of a nontrivial Berry phase shift only in one of the oscillatory frequencies. We interpret this as a Berry phase arising from the semi-classical electronic Landau orbit which links with the nodal ring when the magnetic field lies in the mirror (ab) plane. Furthermore, additional Berry phase accumulates while rotating the magnetic field for the second orbit in the same orientation which does not link with the nodal ring. These effects are expected in CaAgAs due to the lack of inversion symmetry. Our study experimentally demonstrates that CaAgAs is an ideal platform for exploring the physics of nodal line semimetals and our approach can be extended to other materials in which trivial and nontrivial oscillations are present.
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