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Register a new userCurrent trends in the physics of nanoscale friction
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Tribology, which studies surfaces in contact and relative motion, includes friction, wear, and lubrication, straddling across different fields: mechanical engineering, materials science, chemistry, nanoscience, physics. This short review restricts to the last two disciplines, with a qualitative survey of a small number of recent progress areas in the physics of nanofriction.
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We report measurements of noncontact friction between surfaces of NbSe$_{2}$ and SrTiO$_{3}$, and a sharp Pt-Ir tip that is oscillated laterally by a quartz tuning fork cantilever. At 4.2 K, the friction coefficients on both the metallic and insulating materials show a giant maximum at the tip-surface distance of several nanometers. The maximum is strongly correlated with an increase in the spring constant of the cantilever. These features can be understood phenomenologically by a distance-dependent relaxation mechanism with distributed time scales.
N{o}rskov and collaborators proposed a simple kinetic model to explain the volcano relation for the hydrogen evolution reaction on transition metal surfaces in such that $ j_0= k_0 f({Delta}G_H)$ where j_0 is the exchange current density, $f({Delta}G_H)$ is a function of the hydrogen adsorption free energy ${Delta}G_H$ as computed from density functional theory, and $k_0$ is a universal rate constant. Herein, focusing on the hydrogen evolution reaction in acidic medium, we revisit the original experimental data and find that the fidelity of this kinetic model can be significantly improved by invoking metal-dependence on $k_0$ such that the logarithm of $k_0$ linearly depends on the absolute value of ${Delta}G_H$. We further confirm this relationship using additional experimental data points obtained from a critical review of the available literature. Our analyses show that the new model decreases the discrepancy between calculated and experimental exchange current density values by up to four orders of magnitude. Furthermore, we show the model can be further improved using machine learning and statistical inference methods that integrate additional material properties
Traditional laws of friction believe that the friction coefficient of two specific solids takes constant value. However, molecular simulations revealed that the friction coefficient of nanosized asperity depends strongly on contact size and asperity radius. Since contacting surfaces are always rough consisting of asperities varying dramatically in geometric size, a theoretical model is developed to predict the friction behavior of fractal rough surfaces in this work. The result of atomic-scale simulations of sphere-on-flat friction is summarized into a uniform expression. Then, the size dependent feature of friction at nanoscale is incorporated into the analysis of fractal rough surfaces. The obtained results display the dependence of friction coefficient on roughness, material properties and load. It is revealed that the friction coefficient decreases with increasing contact area or external load. This model gives a theoretical guideline for the prediction of friction coefficient and the design of friction pairs.
Due to the strongly nonlocal nature of $f_{xc}({bf r},{bf r},omega)$ the {em scalar} exchange and correlation (xc) kernel of the time-dependent density-functional theory (TDDFT), the formula for Q the friction coefficient of an interacting electron gas (EG) for ions tends to give a too large value of Q for heavy ions in the medium- and low-density EG, if we adopt the local-density approximation (LDA) to $f_{xc}({bf r},{bf r},omega)$, even though the formula itself is formally exact. We have rectified this unfavorable feature by reformulating the formula for Q in terms of the {em tensorial} xc kernel of the time dependent current-density functional theory, to which the LDA can be applied without intrinsic difficulty. Our numerical results find themselves in a considerably better agreement with the experimental stopping power of Al and Au for slow ions than those previously obtained within the LDA to the TDDFT.
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500~keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14~keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.
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