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Register a new userSurface Piezoelectricity of (0001) Sapphire
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Added by
Alexandru Bogdan Georgescu
Publication date
2017
fields
Physics
and research's language is
English
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Interfaces of sapphire are of technological relevance as sapphire is used as a substrate in electronics, lasers, and Josephson junctions for quantum devices. In addition, its surface is potentially useful in catalysis. Using first principles calculations, we show that, unlike bulk sapphire which has inversion symmetry, the (0001) sapphire surface is piezoelectric. The inherent broken symmetry at the surface leads to a surface dipole and a significant response to imposed strain: the magnitude of the surface piezoelectricity is comparable to that of bulk piezoelectrics.
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The structure of the $(sqrt{31}times sqrt{31})Rpm9^circ$ reconstructed phase on sapphire (0001) surface is investigated by means of a simulation based on the energy minimization. The interaction between Al adatoms is described with the semi-empirical many-body Sutton-Chen potential, corrected for the charge transfer between the metallic overlayer and the substrate. The interactions between the Al adatoms and sapphire substrate are described with a simple three-dimensional potential field which has the hexagonal periodicity of sapphire surface. Our energy analysis gave evidence that the structure which is observed at room temperature is in fact a frozen high-temperature structure. In accordance with the X-ray scattering, a hexagonal domain pattern separated by domain walls has been found. The Al adatoms, distributed in two monolayers, are ordered and isomorphic to metallic Al(111) in the domains and disordered in the domain walls. The main reason for the rotational reconstruction is the lattice misfit between the metallic Al and sapphire.
Most spectroscopic methods for studying the electronic structure of metal surfaces have the disadvantage that either only occupied or only unoccupied states can be probed, and the signal is cut at the Fermi edge. This leads to significant uncertainties, when states are very close to the Fermi level. By performing low-temperature scanning tunneling spectroscopy and ab initio calculations, we study the surface-electronic structure of La(0001) and Lu(0001), and demonstrate that in this way detailed information on the surface-electronic structure very close to the Fermi energy can be derived with high accuracy.
The epitaxial system Sm/Co(0001) was studied for Sm coverages up to 1 monolayer (ML) on top of ultrathin Co/W(110) epitaxial films. Two ordered phases were found for 1/3 and 1 ML Sm, respectively. The valence state of Sm was determined by means of photoemission and magnetic properties were measured by magneto-optical Kerr effect. We find that 1 ML Sm causes a strong increase of the coercivity with respect to that of the underlying 10 ML Co film. Element-specific hysteresis loops, measured by using resonant soft x-ray reflectivity, show the same magnetic behaviour for the two elements.
We report the results of x-ray scattering studies of AlN on c-plane sapphire during reactive radiofrequency magnetron sputtering. The sensitivity of in situ x-ray measurements allowed us to follow the structural evolution of strain and roughness from initial nucleation layers to fullyrelaxed AlN films. A growth rate transient was observed, consistent with the initial formation of non-coalesced islands with significant oxygen incorporation from the substrate. Following island coalescence, a steady state growth rate was seen with a continuous shift of the c and a lattice parameters towards the relaxed bulk values as growth progressed, with films reaching a fully relaxed state at thicknesses of about 30 nm.
MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition of manganese and arsenic layers. It was shown that spontaneous formation of MnAs dots with the surface density of 1$cdot 10^{11}$ cm$^{-2}$ and $2.5cdot 10^{11}$ cm$^{-2}$, respectively (as observed by AFM), occurred for the layer thickness higher than 5 ML. Electronic structure of the MnAs/GaN systems was studied by resonant photoemission spectroscopy. That led to determination of the Mn 3d - related contribution to the total density of states (DOS) distribution of MnAs. It has been proven that the electronic structures of the MnAs dots grown by the two procedures differ markedly. One corresponds to metallic, ferromagnetic NiAs-type MnAs, the other is similar to that reported for half-metallic zinc-blende MnAs. Both system behave superparamagnetically (as revealed by magnetization measurements), but with both the blocking temperatures and the intra-dot Curie temperatures substantially different. The intra-dot Curie temperature is about 260 K for the former system while markedly higher than room temperature for the latter one. Relations between growth process, electronic structure and other properties of the studied systems are discussed. Possible mechanisms of half-metallic MnAs formation on GaN are considered.
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