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Register a new userBalanced electron-hole transport in spin-orbit semimetal SrIrO3 heterostructures
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Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with one another, complicating the extraction of the transport coefficients of different bands. The 5d oxide SrIrO3 hosts parabolic bands of heavy holes and light electrons in gapped Dirac cones due to the interplay between electron-electron interactions and spin-orbit coupling. We present a multifold approach relying on different experimental techniques and theoretical calculations to disentangle its complex electronic properties. By combining magnetotransport and thermoelectric measurements in a field-effect geometry with first-principles calculations, we quantitatively determine the transport coefficients of different conduction channels. Despite their different dispersion relationships, electrons and holes are found to have strikingly similar transport coefficients, yielding a holelike response under field-effect and thermoelectric measurements and a linear, electronlike Hall effect up to 33 T.
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Spin orbit coupling provides a mechanism to lock the momentum of electron to its spin degree, recent years was revealed to be essential in arousing many novel physical behaviors. SrIrO3 is a typical metallic member of the strong spin orbit coupling iridate family. Its orthorhombic phase was confirmed as a particular spin orbit coupling assistant electron correlated semimetal with small electron and hole pockets, and was supposed to host versatile topological phases, with prospect of opening a new topological matter field based on oxides. The existing experiments have demonstrated that orthorhombic SrIrO3 can be easily synthesized at two dimensional scale films under the substrate lattice constraint, and the films display Fermi-liquid behavior in high temperature and generally two dimensional weak localization resulted metal insulator transition. The properties of orthorhombic SrIrO3 film are sensitive to the rotation and tilting angle, as well as the interlayer coupling of the IrO6 octahedras, consequently can be tuned through substrate strain engineering and size scale. For example, the film was approached a state similar to Sr2IrO4 at the ultrathin limit to several unit cell, becoming a canted antiferromagnetic semiconductor/insulator. The existing knowledges suggest urgent demands of researches on the superlattices constructed with orthorhombic SrIrO3, for further understanding the evolution mechanism of the electron structure, and so the relevant magnetic state and topological phases in the orthorhombic SrIrO3 and its family.
Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices.
We study origin of Rashba spin-orbit interaction at SrTiO$_3$ surfaces and LaAlO$_3$/SrTiO$_3$ interfaces by considering the interplay between atomic spin-orbit coupling and inversion asymmetry at the surface or interface. We show that, in a simple tight-binding model involving 3d $t_{2g}$ bands of Ti ions, the induced spin-orbit coupling in the $d_{xz}$ and $d_{yz}$ bands is cubic in momentum whereas the spin-orbit interaction in the $d_{xy}$ band has linear momentum dependence. We also find that the spin-orbit interaction in one-dimensional channels at LaAlO$_3$/SrTiO$_3$ interfaces is linear in momentum for all bands. We discuss implications of our results for transport experiments on SrTiO$_3$ surfaces and LaAlO$_3$/SrTiO$_3$ interfaces. In particular, we analyze the effect of a given spin-orbit interaction term on magnetotransport of LaAlO$_3$/SrTiO$_3$ by calculating weak anti-localization corrections to the conductance and to universal conductance fluctuations.
Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving isostructural MIT is of great importance for fundamental physics and even more for applications. Here, we report an isostructural metal-insulator transition driven by dimensional-crossover in spin-orbital coupled SrIrO3 films. By using in-situ pulsed laser deposition and angle-resolved photoemission spectroscopy, we synthesized and investigated the electronic structure of SrIrO3 ultrathin films with atomic-layer precision. Through inserting orthorhombic CaTiO3 buffer layers, we demonstrate that the crystal structure of SrIrO3 films remains bulk-like with similar oxygen octahedra rotation and tilting when approaching the ultrathin limit. We observe that a dimensional-crossover metal-insulator transition occurs in isostructural SrIrO3 films. Intriguingly, we find the bandwidth of Jeff=3/2 states reduces with lowering the dimensionality and drives the metal-insulator transition. Our results establish a bandwidth controlled metal-insulator transition in the isostructural SrIrO3 thin films.
We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by scanning tunneling spectroscopy, showing that 4 unit cells SrIrO$_3$ is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO$_3$ is accompanied by antiferromagnetic order.
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