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Register a new userModulating the phase transition temperature of giant magnetocaloric thin films by ion irradiation
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Added by
Martino Trassinelli
Publication date
2017
fields
Physics
and research's language is
English
Authors
S. Cervera
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Magnetic refrigeration based on the magnetocaloric effect at room temperature is one of the most attractive alternative to the current gas compression/expansion method routinely employed. Nevertheless, in giant magnetocaloric materials, optimal refrigeration is restricted to the narrow temperature window of the phase transition (Tc). In this work, we present the possibility of varying this transition temperature into a same giant magnetocaloric material by ion irradiation. We demonstrate that the transition temperature of iron rhodium thin films can be tuned by the bombardment of ions of Ne 5+ with varying fluences up to 10 14 ions cm --2 , leading to optimal refrigeration over a large 270--380 K temperature window. The Tc modification is found to be due to the ion-induced disorder and to the density of new point-like defects. The variation of the phase transition temperature with the number of incident ions opens new perspectives in the conception of devices using giant magnetocaloric materials.
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We investigate thin film resistive thermometry based on metal-to-insulator-transition (niobium nitride) materials down to very low temperature. The variation of the NbN thermometer resistance have been calibrated versus temperature and magnetic field. High sensitivity in tempertaure variation detection is demonstrated through efficient temperature coefficient of resistance. The nitrogen content of the niobium nitride thin films can be tuned to adjust the optimal working temperature range. In the present experiment, we show the versatility of the NbN thin film technology through applications in very different low temperature use-cases. We demonstrate that thin film resistive thermometry can be extended to temperatures below 30 mK with low electrical impedance.
The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, aggressive thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline b{eta}-Ga2O3 thin films on high thermal conductivity SiC substrates by ion-cutting technique. The thermal boundary conductance (TBC) of the b{eta}-Ga2O3-SiC interfaces and thermal conductivity of the b{eta}-Ga2O3 thin films were measured by Time-domain Thermoreflectance (TDTR) to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the b{eta}-Ga2O3-SiC TBC values increase with decreasing interlayer thickness and the b{eta}-Ga2O3 thermal conductivity increases more than twice after annealing at 800 oC due to the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high-quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and b{eta}-Ga2O3 related semiconductor devices.
It was discovered in 2010 that Croconic Acid, in its crystal form, has the highest polarization among organic ferroelectrics. In the context of eliminating toxic substances from electronic devices, Croconic Acid has a great potential as a sublimable lead-free ferroelectric. However, studies on ferroelectric properties of its thin films are only in their early stages and its capability to be incorporated in nanoscale devices is unknown. In this work, we demonstrate, upon ferroelectric switching at the nanoscale, stable and enduring room temperature polarization with no leakage current in Croconic Acid thin films. We thus show that it is a promising lead-free organic ferroelectric toward integration in nanoscale devices. The challenging switching current and polarization reversal characterization at the nanoscale was done using a unique combination of piezoresponse force microscopy, polarization switching current spectroscopy and the concurrent electromechanical strain response. Indeed, this combination can help to rationalize otherwise asymmetric polarization-voltage data and distorted hysteresis due to current jumps below the background noise, which are statistically washed away in macrojunctions but become prevalent at the nanoscale. These results are valid irrespective of the ferroelectrics nature, organic or inorganic. Beyond the potential of Croconic Acid as an ecological ferroelectric material in devices, our detection of a clear nanoscopic polarization switching current thus paves the way for a fundamental understanding and technological applications of the polarization reversal mechanism at the nanoscale.
Mechanical control of magnetic properties in magnetostrictive thin films offers the unexplored opportunity to employ surface wave acoustics in such a way that acoustic triggers dynamic magnetic effects. The strain-induced modulation of the magnetic anisotropy can play the role of a high frequency varying effective magnetic field leading to ultrasonic tuning of electronic and magnetic properties of nanostructured materials, eventually integrated in semiconductor technology. Here, we report about the opportunity to employ surface acoustic waves to trigger magnetocaloric effect in MnAs(100nm)/GaAs(001) thin films. During the MnAs magnetostructural phase transition, in an interval range around room temperature (0{deg}C - 60{deg}C), ultrasonic waves (170 MHz) are strongly attenuated by the phase coexistence (up to 150 dB/cm). We show that the giant magnetocaloric effect of MnAs is responsible of the observed phenomenon. By a simple anelastic model we describe the temperature and the external magnetic field dependence of such a huge ultrasound attenuation. Strain-manipulation of the magnetocaloric effect could be a further interesting route for dynamic and static caloritronics and spintronics applications in semiconductor technology.
Hydroxyapatite synthesized by a wet chemical route was subjected to heavy Krypton ion irradiation of 4MeV at various fluences. Glancing incidence Xray diffraction results confirmed the phase purity of irradiated HA with a moderate contraction in lattice parameters, and further indicated the irradiation induced structural disorder, evidenced by broadening of the diffraction peaks. High resolution transmission electron microscopy observations indicated that the applied Kr irradiation induced significant damage in the hydroxyapatite lattice. Specifically, cavities were observed with their diameter and density varying with the irradiation fluences, while a radiation induced crystalline to amorphous transition with increasing ion dose was identified. Raman and Xray photoelectron spectroscopy analysis further indicated the presence of irradiation induced defects. Ion release from pristine and irradiated materials following immersion in Trisbuffer showed that dissolution in vitro was enhanced by irradiation. We examined the effects of irradiation on the early stages of the mouse osteoblast like cells response. A cell counting kit 8 assay was carried out to investigate the cytotoxicity of samples, and viable cells can be observed on the irradiated materials.
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