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Register a new userPhotoassisted shot noise spectroscopy at fractional filling factor
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We study the photoassisted shot noise generated by a periodic voltage in the fractional quantum Hall regime. Fluctuations of the current are due to the presence of a quantum point contact operating in the weak backscattering regime. We show how to reconstruct the photoassisted absorption and emission probabilities by varying independently the dc and ac contributions to the voltage drive. This is made possible by the peculiar power-law behavior of the tunneling rates in the chiral Luttinger liquid theory, which allow to approximate the typical infinite sums of the photoassisted transport formalism in a simple and particularly convenient way.
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We have experimentally identified fractional quasiparticle creation in a tunneling process through a local fractional quantum Hall (FQH) state. The local FQH state is prepared in a low-density region near a quantum point contact (QPC) in an integer quantum Hall (IQH) system. Shot-noise measurements reveal a clear transition from elementary-charge tunneling at low bias to fractional-charge tunneling at high bias. The fractional shot noise is proportional to T1(1 ? T1) over a wide range of T1, where T1 is the transmission probability of the IQH edge channel. This binomial distribution indicates that fractional quasiparticles emerge from the IQH state to be transmitted through the local FQH state. The study of this tunneling process will enable us to elucidate the dynamics of Laughlin quasiparticles in FQH systems.
A fractional quasiparticle charge is a manifestation of strong interactions in the fractional quantum Hall effect. Nevertheless, shot noise of quasiparticles is well described by a formula, derived for noninteracting charges. We explain the success of that formula by proving that in the limits of strong and weak backscattering it holds irrespectively of microscopic details in weakly and strongly interacting systems alike. The derivation relies only on principles of statistical mechanics. We also derive an approximate model-independent formula for shot noise in the regime of intermediate backscattering. The equation is numerically close to the standard `noninteracting fitting formula but suggests a different physical interpretation of the experimental results. We verify our theoretical predictions with a shot noise experiment at the filling factor $3/5$.
The effect of an AC perturbation on the shot noise of a fractional quantum Hall fluid is studied both in the weak and the strong backscattering regimes. It is known that the zero-frequency current is linear in the bias voltage, while the noise derivative exhibits steps as a function of bias. In contrast, at Laughlin fractions, the backscattering current and the backscattering noise both exhibit evenly spaced singularities, which are reminiscent of the tunneling density of states singularities for quasiparticles. The spacing is determined by the quasiparticle charge $ u e$ and the ratio of the DC bias with respect to the drive frequency. Photo--assisted transport can thus be considered as a probe for effective charges at such filling factors, and could be used in the study of more complicated fractions of the Hall effect. A non-perturbative method for studying photo--assisted transport at $ u=1/2$ is developed, using a refermionization procedure.
Transport properties of graphene - superconductor junction has been studied extensively to understand the interplay of the relativistic Dirac quasiparticles and superconductivity. Though shot noise measurements in graphene has been performed to realize many theoretical predictions, both at zero magnetic field as well as quantum Hall (QH) regime, its junction with superconductor remain unexplored. Here, we have carried out the shot noise measurements in an edge contacted bilayer graphene - Niobium superconductor junction at zero magnetic field as well as QH regime. At the Dirac point we have observed a Fano factor ~ 1/3 above the superconducting gap and a transition to an enhanced Fano factor ~ 0.5 below the superconducting gap. By changing the carrier density we have found a continuous reduction of Fano factor for both types of carriers, however the enhancement of Fano factor within the superconducting gap by a factor of ~ 1.5 is always preserved. The enhancement of shot noise is also observed in the QH regime, where the current is carried by the edge state, below the critical magnetic field and within the superconducting gap. These observations clearly demonstrate the enhanced charge transport at the graphene-superconductor interface.
We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma-point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this la
ttice mode (associated with the G-band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0 -> (+,1) and (-,1) -> 0, at a magnetic field B_0 ~ 30 T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice modes.
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