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On the formation of a conducting surface channel by ionic liquid gating of an insulator

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 Added by Hasan Atesci
 Publication date 2017
  fields Physics
and research's language is English




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Ionic liquid gating has become a popular tool for tuning the charge carrier densities of complex oxides. Among these the band insulator SrTiO$_3$ is one of the most extensively studied materials. While experiments have succeeded in inducing (super)conductivity, the process by which ionic liquid gating turns this insulator into a conductor is still under scrutiny. Recent experiments have suggested an electrochemical rather than electrostatic origin of the induced charge carriers. Here, we report experiments probing the time evolution of conduction of SrTiO$_3$ near the glass transition temperature of the ionic liquid. By cooling down to temperatures near the glass transition of the ionic liquid the process develops slowly and can be seen to evolve in time. The experiments reveal a process characterized by waiting times that can be as long as several minutes preceding a sudden appearance of conduction. For the conditions applied in our experiments we find a consistent interpretation in terms of an electrostatic mechanism for the formation of a conducting path at the surface of SrTiO$_3$. The mechanism by which the conducting surface channel develops relies on a nearly homogeneous lowering of the surface potential until the conduction band edge of SrTiO$_3$ reaches the Fermi level of the electrodes.



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Ionic liquid gating can markedly modulate the materials carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in ionic liquid gating effect is still unclear. Here, we perform the ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr2Ge2Te6. Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect (< 5 % difference), which suggests the electrostatic field effect as the mechanism on non-oxide materials. Moreover, our results show that the ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO2.
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