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Register a new userRole of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films
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Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert damping and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated through spin Hall effect and Rashba-Edelstein effect in heavy metal/MI bilayers. SOTs on MIs are more intriguing than magnetic metals since SOTs cannot be transferred to MIs through direct injection of electron spins. Understanding of SOTs on MIs remains elusive, especially how SOTs scale with the film thickness. Here, we observe the critical role of dimensionality on the SOT efficiency by systematically studying the MI layer thickness dependent SOT efficiency in tungsten/thulium iron garnet (W/TmIG) bilayers. We first show that the TmIG thin film evolves from two-dimensional to three-dimensional magnetic phase transitions as the thickness increases, due to the suppression of long-wavelength thermal fluctuation. Then, we report the significant enhancement of the measured SOT efficiency as the thickness increases. We attribute this effect to the increase of the magnetic moment density in concert with the suppression of thermal fluctuations. At last, we demonstrate the current-induced SOT switching in the W/TmIG bilayers with a TmIG thickness up to 15 nm. The switching current density is comparable with those of heavy metal/ferromagnetic metal cases. Our findings shed light on the understanding of SOTs in MIs, which is important for the future development of ultrathin MI-based low-power spintronics.
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Field-like spin orbit torque in FeMn/Pt bilayers with ultra-thin polycrystalline FeMn has been characterized through planar Hall effect measurements. A large effective field is obtained for FeMn in the thickness range of 2 to 5 nm. The experimental observations can be reasonably accounted for by using a macro-spin model under the assumption that the FeMn layer is composed of two spin sublattices with unequal magnetizations. The large effective field corroborates the spin Hall origin of the effective field considering the much smaller uncompensated net moments in FeMn as compared to NiFe. The effective absorption of spin current by FeMn is further confirmed by the fact that spin current generated by Pt in NiFe/FeMn/Pt trilayers can only travel through the FeMn layer with a thickness of 1 to 4 nm. By quantifying the field-like effective field induced in NiFe, a spin diffusion length of 2 nm is estimated in FeMn, in consistence with values reported in literature by ferromagnetic resonance and spin-pumping experiments.
We experimentally demonstrate generation of coherent propagating magnons in ultra-thin magnetic-insulator films by spin-orbit torque induced by dc electric current. We show that this challenging task can be accomplished by utilizing magnetic-insulator films with large perpendicular magnetic anisotropy. We demonstrate simple and flexible spin-orbit torque devices, which can be used as highly efficient nanoscale sources of coherent propagating magnons for insulator-based spintronic applications.
Spin-orbit torque enables electrical control of the magnetic state of ferromagnets or antiferromagnets. In this work we consider the spin-orbit torque in the 2-d Van der Waals antiferromagnetic bilayer CrI$_3$, in the $n$-doped regime. In the purely antiferromagnetic state, two individually inversion-symmetry broken layers of CrI$_3$ form inversion partners, like the well-studied CuMnAs and Mn$_2$Au. However, the exchange and anisotropy energies are similar in magnitude, unlike previously studied antiferromagnets, which leads to qualitatively different behaviors in this material. Using a combination of first-principles calculations of the spin-orbit torque and an analysis of the ensuing spin dynamics, we show that the deterministic electrical switching of the Neel vector is the result of dampinglike spin-orbit torque, which is staggered on the magnetic sublattices.
Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices using SOTs is to enhance the charge to spin conversion efficiency. Besides, the current-induced spin polarization is usually limited to in-plane, whereas out-of-plane spin polarization could be favored for efficient perpendicular magnetization switching. Recent advances in utilizing two important classes of van der Waals materials$-$topological insulators and transition-metal dichalcogenides$-$as spin sources to generate SOT shed light on addressing these challenges. Topological insulators such as bismuth selenide have shown a giant SOT efficiency, which is larger than those from three-dimensional heavy metals by at least one order of magnitude. Transition-metal dichalcogenides such as tungsten telluride have shown a current-induced out-of-plane spin polarization, which is allowed by the reduced symmetry. In this review, we use symmetry arguments to predict and analyze SOTs in van der Waal material-based heterostructures. We summarize the recent progress of SOT studies based on topological insulators and transition-metal dichalcogenides and show how these results are in line with the symmetry arguments. At last, we identify unsolved issues in the current studies and suggest three potential research directions in this field.
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