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Register a new userCurrent induced multi-mode propagating spin waves in a spin transfer torque nano-contact with strong perpendicular magnetic anisotropy
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Current induced spin wave excitations in spin transfer torque nano-contacts are known as a promising way to generate exchange-dominated spin waves at the nano-scale. It has been shown that when these systems are magnetized in the film plane, broken spatial symmetry of the field around the nano-contact induced by the Oersted field opens the possibility for spin wave mode co-existence including a non-linear self-localized spin-wave bullet and a propagating mode. By means of micromagnetic simulations, here we show that in systems with strong perpendicular magnetic anisotropy (PMA) in the free layer, two propagating spin wave modes with different frequency and spatial distribution can be excited simultaneously. Our results indicate that in-plane magnetized spin transfer nano-contacts in PMA materials do not host a solitonic self-localized spin-wave bullet, which is different from previous studies for systems with in plane magnetic anisotropy. This feature renders them interesting for nano-scale magnonic waveguides and crystals since magnon transport can be configured by tuning the applied current.
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We experimentally study the dynamical modes excited by spin current in Spin Hall nano-oscillators based on the Pt/[Co/Ni] multilayers with perpendicular magnetic anisotropy. Both propagating spin wave and localized solitonic modes of the oscillation are achieved and controlled by varying the applied magnetic field and current. At room temperature, the generation linewidth broadening associated with mode hopping was observed at currents close to the transition between different modes and in the mode coexistence regimes. The mode hopping was suppressed at cryogenic temperatures, confirming that the coupling between modes is mediated by thermal magnons. We also demonstrate that coherent single-mode oscillations with linewidth of 5 MHz can be achieved without applying external magnetic field. Our results provide insight into the mechanisms controlling the dynamical coherence in nanomagnetic oscillators, and guidance for optimizing their applications in spin wave-based electronics.
We investigate an interfacial spin-transfer torque and $beta$-term torque with alternating current (AC) parallel to a magnetic interface. We find that both torques are resonantly enhanced as the AC frequency approaches to the exchange splitting energy. We show that this resonance allows us to estimate directly the interfacial exchange interaction strength from the domain wall motion. We also find that the $beta$-term includes an unconventional contribution which is proportional to the time derivative of the current and exists even in absence of any spin relaxation processes.
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technological nodes, thanks to a reinforcement of the thermal stability factor $Delta$. Although the larger storage layer thickness improves $Delta$, it is expected to negatively impact the writing current and switching time. Hence, optimization of the cell dimensions (diameter, thickness) is of utmost importance for attaining a sufficiently high $Delta$ while keeping a moderate writing current. Micromagnetic simulations were carried out for different pillar thicknesses of fixed lateral size 20 nm. The switching time and the reversal mechanism were analysed as a function of the applied voltage and aspect-ratio (AR) of the storage layer. For AR $<$ 1, the magnetization reversal resembles a macrospin-like mechanism, while for AR $>$ 1 a non-coherent reversal is observed, characterized by the nucleation of a transverse domain wall at the ferromagnet/insulator interface which then propagates along the vertical axis of the pillar. It was further observed that the inverse of the switching time is linearly dependent on the applied voltage. This study was extended to sub-20 nm width with a value of $Delta$ around 80. It was observed that the voltage necessary to reverse the magnetic layer increases as the lateral size is reduced, accompanied with a transition from macrospin-reversal to a buckling-like reversal at high aspect-ratios.
We investigate the dynamics of a magnetic vortex driven by spin-transfer torque due to spin current in the adiabatic case. The vortex core represented by collective coordinate experiences a transverse force proportional to the product of spin current and gyrovector, which can be interpreted as the geometric force determined by topological charges. We show that this force is just a reaction force of Lorentz-type force from the spin current of conduction electrons. Based on our analyses, we propose analytically and numerically a possible experiment to check the vortex displacement by spin current in the case of single magnetic nanodot.
Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions which are disadvantaged by low power outputs and poor conversion efficiencies. In this letter, we theoretically propose to use resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present device designs geared toward a high microwave output power and an efficient conversion of the d.c. input power. We attribute these robust qualities to the resulting non-trivial spin current profiles and the ultra high tunnel magnetoresistance, both arising from resonant spin filtering. The device designs are based on the nonequilibrium Greens function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewskis equation and the Poissons equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around $775%$ and an efficiency enhancement of over $1300%$ in comparison with typical trilayer designs. We also rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. This work sets stage for pentalyer spin transfer torque nano-oscillator device designs that extenuate most of the issues faced by the typical trilayer designs.
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