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Register a new userEntanglement Chern number for three-dimensional topological insulators: Characterization by Weyl points of entanglement Hamiltonians
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We propose characterization of the three-dimensional topological insulator by using the Chern number for the entanglement Hamiltonian (entanglement Chern number). Here we take the extensive spin partition of the system, that pulls out the quantum entanglement between up spin and down spin of the many-body ground state. In three dimensions, the topological insulator phase is described by the section entanglement Chern number, which is the entanglement Chern number for a periodic plane in the Brillouin zone. The section entanglement Chern number serves as an interpolation of the $Z_2$ invariants defined on time-reversal invariant planes. We find that the change of the section entanglement Chern number protects the Weyl point of the entanglement Hamiltonian and the parity of the number of Weyl points distinguishes the strong topological insulator phase from the weak topological insulator phase.
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The entanglement Chern number, the Chern number for the entanglement Hamiltonian, is used to charac- terize the Kane-Mele model, which is a typical model of the quantum spin Hall phase with the time reversal symmetry. We first obtain the global phase diagram of the Kane-Mele model in terms of the entanglement spin Chern number, which is defined by using a spin subspace as a subspace to be traced out in preparing the entanglement Hamiltonian. We further demonstrate the effectiveness of the entanglement Chern number without the time reversal symmetry and spin conservation by extending the Kane-Mele model to include the Zeeman term. The numerical results confirm that the sum of the entanglement spin Chern number equals to the Chern number.
Dislocations are ubiquitous in three-dimensional solid-state materials. The interplay of such real space topology with the emergent band topology defined in reciprocal space gives rise to gapless helical modes bound to the line defects. This is known as bulk-dislocation correspondence, in contrast to the conventional bulk-boundary correspondence featuring topological states at boundaries. However, to date rare compelling experimental evidences are presented for this intriguing topological observable, owing to the presence of various challenges in solid-state systems. Here, using a three-dimensional acoustic topological insulator with precisely controllable dislocations, we report an unambiguous experimental evidence for the long-desired bulk-dislocation correspondence, through directly measuring the gapless dispersion of the one-dimensional topological dislocation modes. Remarkably, as revealed in our further experiments, the pseudospin-locked dislocation modes can be unidirectionally guided in an arbitrarily-shaped dislocation path. The peculiar topological dislocation transport, expected in a variety of classical wave systems, can provide unprecedented controllability over wave propagations.
Regarding three-dimensional (3D) topological insulators and semimetals as a stack of constituent 2D topological (or sometimes non-topological) layers is a useful viewpoint. Primarily, concrete theoretical models of the paradigmatic 3D topological phases such as Weyl semimetal (WSM), strong and weak topological insulators (STI/WTI), and Chern insulator (CI), are often constructed in that way. Secondarily, fabrication of the corresponding 3D topological material is also done in the same spirit; epitaxial growth technique is employed, making the resulting sample in the form of a thin film. Here, in this paper we calculate $mathbb{Z}$- and $mathbb{Z}_2$-indices and study evolution of the topological properties of such thin films of 3D topological systems, making also a comparative study of CI- vs. TI-type models belonging to different symmetry classes in this respect. Through this comparative study we suggest that WSM is to CI as STI is to WTI. Finally, to test the robustness of our scenario against disorder and relevance to experiments we have also studied numerically the two-terminal conductance of the system using transfer matrix method.
Topological insulators in three dimensions are characterized by a Z2-valued topological invariant, which consists of a strong index and three weak indices. In the presence of disorder, only the strong index survives. This paper studies the topological invariant in disordered three-dimensional system by viewing it as a super-cell of an infinite periodic system. As an application of this method we show that the strong index becomes non-trivial when strong enough disorder is introduced into a trivial insulator with spin-orbit coupling, realizing a strong topological Anderson insulator. We also numerically extract the gap range and determine the phase boundaries of this topological phase, which ?ts well with those obtained from self-consistent Born approximation (SCBA) and the transport calculations.
Recent experiments showed that the surface of a three dimensional topological insulator develops gaps in the Floquet-Bloch band spectrum when illuminated with a circularly polarized laser. These Floquet-Bloch bands are characterized by non-trivial Chern numbers which only depend on the helicity of the polarization of the radiation field. Here we propose a setup consisting of a pair of counter-rotating lasers, and show that one-dimensional chiral states emerge at the interface between the two lasers. These interface states turn out to be spin-polarized and may trigger interesting applications in the field of optoelectronics and spintronics.
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