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Register a new userQuantized chiral edge conduction on reconfigurable domain walls of a magnetic topological insulator
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The electronic orders in magnetic and dielectric materials form the domains with different signs of order parameters. The control of configuration and motion of the domain walls (DWs) enables gigantic, nonvolatile responses against minute external fields, forming the bases of contemporary electronics. As an extension of the DW function concept, we realize the one-dimensional quantized conduction on the magnetic DWs of a topological insulator (TI). The DW of a magnetic TI is predicted to host the chiral edge state (CES) of dissipation-less nature when each magnetic domain is in the quantum anomalous Hall state. We design and fabricate the magnetic domains in a magnetic TI film with the tip of the magnetic force microscope, and clearly prove the existence of the chiral one-dimensional edge conduction along the prescribed DWs. The proof-of-concept devices based on the reconfigurable CES and Landauer-Buttiker formalism are exemplified for multiple-domain configurations with the well-defined DW channels.
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We study the transport on the domain wall (DW) in a magnetic topological insulator. The low-energy behaviors of the magnetic topological insulator are dominated by the chiral edge states (CESs). Here, we find that the spectrum and transport of the CESs at the DW are strongly dependent on the DW configuration. For a Bloch wall, two co-propagating CESs at the DW are doubly degenerate and the incoming electron is totally reflected. However, for a N{e}el wall, the two CESs are split and the transmission is determined by the interference between the CESs. Moreover, the effective Hamiltonian for the CESs indicates that the component of magnetization perpendicular to the wall leads to the distinct transport behavior. These findings may pave a way to realize the low-power-dissipation spintronics devices based on magnetic DWs.
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall (DW) is a topological object that has been observed to follow this behavior. Here we show that acceleration and deceleration times of chiral Neel walls driven by current are different in a system with low damping and moderate Dzyaloshinskii-Moriya (DM) exchange constant. The time needed to accelerate a DW with current via the spin Hall torque is much faster than the time it needs to decelerate once the current is turned off. The deceleration time is defined by the DM exchange constant whereas the acceleration time depends on the spin Hall torque, enabling tunable inertia of chiral DWs. Such unique feature of chiral DWs can be utilized to move and position DWs with lower current, key to the development of storage class memory devices.
A magnetic domain boundary on the surface of a three-dimensional topological insulator is predicted to host a chiral edge state, but direct demonstration is challenging. Here, we used a scanning superconducting quantum interference device to show that current in a magnetized EuS/Bi2Se3 heterostructure flows at the edge when the Fermi level is gate-tuned to the surface band gap. We further induced micron-scale magnetic structures on the heterostructure, and detected a chiral edge current at the magnetic domain boundary. The chirality of the current was determined by magnetization of the surrounding domain and its magnitude by the local chemical potential rather than the applied current. Such magnetic structures, provide a platform for detecting topological magnetoelectric effects and may enable progress in quantum information processing and spintronics.
Recent experimental studies of magnetic domain expansion under easy-axis drive fields in materials with a perpendicular magnetic anisotropy have shown that the domain wall velocity is asymmetric as a function of an external in plane magnetic field. This is understood as a consequence of the inversion asymmetry of the system, yielding a finite chiral Dzyaloshinskii-Moriya interaction. Numerous attempts have been made to explain these observations using creep theory, but, in doing so, these have not included all contributions to the domain wall energy or have introduced additional free parameters. In this article we present a theory for creep motion of chiral domain walls in the creep regime that includes the most important contributions to the domain-wall energy and does not introduce new free parameters beyond the usual parameters that are included in the micromagnetic energy. Furthermore, we present experimental measurements of domain wall velocities as a function of in-plane field that are well decribed by our model, and from which material properties such as the strength of the Dzyaloshinskii-Moriya interaction and the demagnetization field are extracted.
Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be described by Dirac fermions. By using a tight-binding model, the transport properties of the surface states in a uniform magnetic field is investigated. It is found that chiral surface states parallel to the magnetic field are responsible to the quantized Hall (QH) conductance $(2n+1)frac{e^2}{h}$ multiplied by the number of Dirac cones. Due to the two-dimension (2D) nature of the surface states, the robustness of the QH conductance against impurity scattering is determined by the oddness and evenness of the Dirac cone number. An experimental setup for transport measurement is proposed.
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