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Integrated quantum photonic applications, providing physially guaranteed communications security, sub-shot-noise measurement, and tremendous computational power, are nearly within technological reach. Silicon as a technology platform has proven formibable in establishing the micro-electornics revoltution, and it might do so again in the quantum technology revolution. Silicon has has taken photonics by storm, with its promise of scalable manufacture, integration, and compatibility with CMOS microelectronics. These same properties, and a few others, motivate its use for large-scale quantum optics as well. In this article we provide context to the development of quantum optics in silicon. We review the development of the various components which constitute integrated quantum photonic systems, and we identify the challenges which must be faced and their potential solutions for silicon quantum photonics to make quantum technology a reality.
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Quantum photonics plays a crucial role in the development of novel communication and sensing technologies. Color centers hosted in silicon carbide and diamond offer single photon emission and long coherence spins that can be scalably implemented in quantum networks. We develop systems that integrate these color centers with photonic devices that modify their emission properties through electromagnetically tailored light and matter interaction.
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Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art integrated quantum photonics demonstrations still require the coupling of light to external photodetectors. On-chip silicon single-photon avalanche diodes (SPADs) provide a viable solution as they can be seamlessly integrated with photonic components, and operated with high efficiencies and low dark counts at temperatures achievable with thermoelectric cooling. Moreover, they are useful in applications such as LIDAR and low-light imaging. In this paper, we report the design and simulation of silicon waveguide-based SPADs on a silicon-on-insulator platform for visible wavelengths, focusing on two device families with different doping configurations: p-n+ and p-i-n+. We calculate the photon detection efficiency (PDE) and timing jitter at an input wavelength of 640 nm by simulating the avalanche process using a 2D Monte Carlo method, as well as the dark count rate (DCR) at 243 K and 300 K. For our simulated parameters, the optimal p-i-n+ SPADs show the best device performance, with a saturated PDE of 52.4 +/- 0.6% at a reverse bias voltage of 31.5 V, full-width-half-max (FWHM) timing jitter of 10 ps, and a DCR of < 5 counts per second at 243 K.
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