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Register a new userInvestigation on nickel ferrite nanowire device exhibiting negative differential resistance $-$ a first-principles investigation
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Added by
Prof. Chandiramouli R.
Publication date
2017
fields
Physics
and research's language is
English
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The electronic property of NiFe$_2$O$_4$ nanowire device is investigated through nonequilibrium Greens functions (NEGF) in combination with density functional theory (DFT). The electronic transport properties of NiFe$_2$O$_4$ nanowire are studied in terms of density of states, transmission spectrum and $I{-}V$ characteristics. The density of states gets modified with the applied bias voltage across NiFe$_2$O$_4$ nanowire device, the density of charge is observed both in the valence band and in the conduction band on increasing the bias voltage. The transmission spectrum of NiFe$_2$O$_4$ nanowire device gives the insights on the transition of electrons at different energy intervals. The findings of the present work suggest that NiFe$_2$O$_4$ nanowire device can be used as negative differential resistance (NDR) device and its NDR property can be tuned with the bias voltage, which may be used in microwave device, memory devices and in fast switching devices.
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We have elaborately studied the electronic structure of 555-777 divacancy (DV) defected armchair edged graphene nanoribbon (AGNR) and transport properties of AGNR based two-terminal device constructed with one defected electrode and one N doped electrode, by using density functional theory and non-equilibrium Greens function based approach. The introduction of 555-777 DV defect into AGNRs, results in a shifting of the {pi} and {pi}* bands towards the higher energy value which indicates a shifting of the Fermi level towards the lower energy. Formation of a potential barrier, very similar to that of conventional p-n junction, has been observed across the junction of defected and N doped AGNR. The prominent asymmetric feature of the current in the positive and negative bias indicates the diode like property of the device with high rectifying efficiency within wide range of bias voltages. The device also shows robust negative differential resistance (NDR) with very high peak-to-valley ratio. The analysis of the shifting of the energy states of the electrodes and the modification of the transmission function with applied bias provides an insight into the nonlinearity and asymmetry observed in the I-V characteristics. Variation of the transport properties on the width of the ribbon has also been discussed.
We have observed tunable negative differential resistance (NDR) in scanning tunneling spectroscopy measurements of a double layer of C60 molecules on a metallic surface. Using a simple model we show that the observed NDR behavior is explained by voltage-dependent changes in the tunneling barrier height.
In this study, we examine the mechanism of nanopore-based DNA sequencing using a voltage bias across a graphene nanoribbon. Using density functional theory and a non-equilibrium Greens function approach, we determine the transmission spectra and current profile for adenine, guanine, cytosine, thymine, and uracil as a function of bias voltage in an energy minimized configuration. Utilizing the transmission current, we provide a general methodology for the development of a three nanopore graphene-based device that can be used to distinguish between the various nucleobases for DNA/RNA sequencing. From our analysis, we deduce that it is possible to use different transverse currents across a multi-nanopore device to differentiate between nucleobases using various voltages of 0.5, 1.3, and 1.6 V. Overall, our goal is to improve nanopore design to further DNA/RNA nucleobase sequencing and biomolecule identification techniques.
Effects of the spin-orbit interactions on the energy spectrum, Fermi surface and spin dynamics are studied in structural- and bulk-inversion asymmetric quasi-two-dimensional structures with a finite thickness in the presence of a parabolic transverse confining potential. One-particle quantum mechanical problem in the presence of an in-plane magnetic field is solved numerically exact. Interplay of the spin-orbit interactions, orbital- and Zeeman-effects of the in-plane magnetic field yields a multi-valley subband structure, typical for realization of the Gunn effect. A possible Gunn-effect-mediated spin accumulation is discussed.
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in the last more than half a century. Here, we report NDR behavior formation in randomly oriented graphene-like nanostructures up to 37 K and high on-current density up to 10^5 A/cm^2. Our modeling of the current-voltage characteristics, including the self-heating effects, suggests that strong temperature dependence of the low-bias resistance is responsible for the nonlinear electrical behavior. Our findings open opportunities for the practical realization of the on-demand NDR behavior in nanostructures of 2D and 3D material-based devices via heat management in the conducting films and the underlying substrates.
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