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Register a new userIsland dynamics and anisotropy during vapor phase epitaxy of m-plane GaN
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Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1 $overline{2}$ 10] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate G and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate G$^{-n}$, with an exponent $n = 0.25 pm 0.02$. Results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.
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Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be explained by the $alpha beta alpha beta$ stacking sequence of the wurtzite crystal structure, which results in steps with alternating $A$ and $B$ edge structures for the lowest energy step azimuths, i.e. steps normal to $[0 1 bar{1} 0]$ type directions. Predicted differences in the adatom attachment kinetics at $A$ and $B$ steps would lead to alternating $alpha$ and $beta$ terrace widths. However, because of the difficulty of experimentally identifying which step is $A$ or $B$, it has not been possible to determine the absolute difference in their behavior, e.g. which step has higher adatom attachment rate constants. Here we show that surface X-ray scattering can measure the fraction of $alpha$ and $beta$ terraces, and thus unambiguously differentiate the growth dynamics of $A$ and $B$ steps. We first present calculations of the intensity profiles of GaN crystal truncation rods (CTRs) that demonstrate a marked dependence on the $alpha$ terrace fraction $f_alpha$. We then present surface X-ray scattering measurements performed textit{in situ} during homoepitaxial growth on (0001) GaN by vapor phase epitaxy. By analyzing the shapes of the $(1 0 bar{1} L)$ and $(0 1 bar{1} L)$ CTRs, we determine that the steady-state $f_alpha$ increases at higher growth rate, indicating that attachment rate constants are higher at $A$ steps than at $B$ steps. We also observe the dynamics of $f_alpha$ after growth conditions are changed. The results are analyzed using a Burton-Cabrera-Frank model for a surface with alternating step types, to extract values for the kinetic parameters of $A$ and $B$ steps. These are compared with predictions for GaN (0001).
We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapour phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires and pyramidal quantum dots form as a consequence of a self-limiting profile that develops, respectively, at the bottom of V-grooves and inverted pyramids. Our model is based on a system of reaction-diffusion equations, one for each crystallographic facet that defines the pattern, and include the group III precursors, their decomposition and diffusion kinetics (for which we discuss the experimental evidence), and the subsequent diffusion and incorporation kinetics of the group-III atoms released by the precursors. This approach can be applied to any facet configuration, including pyramidal quantum dots, but we focus on the particular case of V-groove templates and offer an explanation for the self-limited profile and the Ga segregation observed in the V-groove. The explicit inclusion of the precursor decomposition kinetics and the diffusion of the atomic species revises and generalizes the earlier work of Basiol et al. [Phys. Rev. Lett. 81, 2962 (1998); Phys. Rev. B 65, 205306 (2002)] and is shown to be essential for obtaining a complete description of self-limiting growth. The solution of the system of equations yields spatially resolved adatom concentrations, from which average facet growth rates are calculated. This provides the basis for determining the conditions that yield selflimiting growth. The foregoing scenario, previously used to account for the growth modes of vicinal GaAs(001) during MOVPE and the step-edge profiles on the ridges of vicinal surfaces patterned with V-grooves, can be used to describe the morphological evolution of any template composed of distinct facets.
We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies as a function of the growth conditions and substrate (growth temperature, V/III ratio, and miscut angle < 0.6deg and orientation toward A or B sites), ranging from stable step flow to previously unreported strong step bunching, over 10 nm in height. These observations suggest a window of growth parameters for optimal quality epitaxial layers. We also present a theoretical model for these growth modes that takes account of deposition, diffusion, and dissociation of molecular precursors, and the diffusion and step incorporation of atoms released by the precursors. The experimental conditions for step flow and step bunching are reproduced by this model, with the step bunching instability caused by the difference in molecular dissociation from above and below step edges, as was discussed previously for GaAs (001).
The effects of mobility of small islands on island growth in molecular beam epitaxy are studied. It is shown that small island mobility affects both the scaling and morphology of islands during growth. Three microscopic models are considered, in which the critical island sizes are $i^*=1,2$ and 3 (such that islands of size $s le i^*$ are mobile while islands of size $s ge i^{ast}+1$ are immobile). As i^* increases, islands become more compact, while the exponent $gamma$ which relates the island density to deposition rate increases. The morphological changes are quantified by using fractal analysis. It is shown that the fractal dimensions are rather insensitive to changes in i^*. However, the prefactors provide a quantitative measure of the changing morphologies.
Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$delta$FeN layers with Fe$_y$N embedded nanocrystals (NCs) textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_mathrm{Al}<41$% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $varepsilon$-Fe$_3$N NCs takes place. Already at an Al concentration $x_mathrm{Al}$,$approx$,5% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $gamma$-Ga$_y$Fe$_{4-y}$N nanocrystals in the layer on the $x_mathrm{Al} = 0%$ buffer lies in-plane, the easy axis of the $varepsilon$-Fe$_3$N NCs in all samples with Al$_x$Ga$_{1-x}$N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.
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