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Register a new userSTM/S study of electronic inhomogeneity evolution with gate voltage in graphene: role of screening and charge-state of interface defects
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Evolution of electronic inhomogeneities with back-gate voltage in graphene on SiO$_2$ was studied using room temperature scanning tunneling microscopy and spectroscopy. The reversal of local contrast in some places in the STS maps and sharp changes in cross-correlations between topographic and conductance maps, when graphene Fermi energy approaches its Dirac point, are attributed to change in charge-state of interface defects. The spatial correlations in the conductance maps, described by two different length scales and their growth during approach to Dirac point, show a qualitative agreement with the predictions of the screening theory of graphene. Thus a sharp change in the two length-scales close to the Dirac point, seen in our experiments, is interpreted in terms of the change in charge state of some of the interface defects. A systematic understanding and control of the charge state of defects will help in memory applications of graphene.
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The electronic states at graphene-SiO$_2$ interface and their inhomogeneity was investigated using the back-gate-voltage dependence of local tunnel spectra acquired with a scanning tunneling microscope. The conductance spectra show two, or occasionally three, minima that evolve along the bias-voltage axis with the back gate voltage. This evolution is modeled using tip-gating and interface states. The energy dependent interface states density, $D_{it}(E)$, required to model the back-gate evolution of the minima, is found to have significant inhomogeneity in its energy-width. A broad $D_{it}(E)$ leads to an effect similar to a reduction in the Fermi velocity while the narrow $D_{it}(E)$ leads to the pinning of the Fermi energy close to the Dirac point, as observed in some places, due to enhanced screening of the gate electric field by the narrow $D_{it}(E)$
We study the intervalley scattering in defected graphene by low-temperature transport measurements. The scattering rate is strongly suppressed when defects are charged. This finding highlights screening of the short-range part of a potential by the long-range part. Experiments on calcium-adsorbed graphene confirm the role of a long-range Coulomb potential. This effect is applicable to other multivalley systems, provided that the charge state of a defect can be electrically tuned. Our result provides a means to electrically control valley relaxation and has important implications in valley dynamics in valleytronic materials.
In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using Landauer-B{u}ttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in the nanotechnology engineering.
Defects in solid commonly limit mechanical performance of the material. However, recent measurements reported that the extraordinarily high strength of graphene is almost retained with the presence of grain boundaries. We clarify in this work that lattice defects in the grain boundaries and distorted geometry thus induced define the mechanical properties characterized under specific loading conditions. Atomistic simulations and theoretical analysis show that tensile tests measure in-plane strength that is governed by defect-induced stress buildup, while nanoindentation probes local strength under the indenter tip and bears additional geometrical effects from warping. These findings elucidate the failure mechanisms of graphene under realistic loading conditions and assess the feasibility of abovementioned techniques in quantifying the strength of graphene, and suggest that mechanical properties of low-dimensional materials could be tuned by implanting defects and geometrical distortion they leads to.
The magnetic field-dependent longitudinal and Hall components of the resistivity rho_xx(H) and rho_xy(H) are measured in graphene on silicon dioxide substrates at temperatures from 1.6 K to room temperature. At charge densities near the charge-neutrality point rho_xx(H) is strongly enhanced and rho_xy(H) is suppressed, indicating nearly equal electron and hole contributions to the transport current. The data are inconsistent with uniformly distributed electron and hole concentrations (two-fluid model) but in excellent agreement with the recent theoretical prediction for inhomogeneously distributed electron and hole regions of equal mobility. At low temperatures and high magnetic fields rho_xx(H) saturates to a value ~h/e^2, with Hall conductivity << e^2/h, which may indicate a regime of localized v = 2 and v = -2 quantum Hall puddles.
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