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Register a new userRobust electric dipole transition at microwave frequencies for nuclear spin qubits in silicon
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The nuclear spin state of a phosphorus donor ($^{31}$P) in isotopically enriched silicon-28 is an excellent host to store quantum information in the solid state. The spins insensitivity to electric fields yields a solid-state qubit with record coherence times, but also renders coupling to other quantum systems very challenging. Here, we describe how to generate a strong electric dipole ($>100$ Debye) at microwave frequencies for the nuclear spin. This is achieved by applying a magnetic drive to the spin of the donor-bound electron, while simultaneously controlling its charge state with electric fields. Under certain conditions, the microwave magnetic drive also renders the nuclear spin resonance frequency and electric dipole strongly insensitive to electrical noise, yielding long ($>1$ ms) dephasing times and robust gate operations. The nuclear spin could then be strongly coupled to microwave resonators, with a vacuum Rabi splitting of order 1 MHz, or to other nuclear spins, nearly half a micrometer apart, via strong electric dipole-dipole interaction. This work brings the $^{31}$P nuclear qubit into the realm of hybrid quantum systems and opens up new avenues in quantum information processing.
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Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flopping-mode electric dipole spin resonance qubit based on the combined electron and nuclear spin states of a double phosphorus donor quantum dot. The key advantage of utilising a donor-based system is that we can engineer the number of donor nuclei in each quantum dot. By creating multi-donor dots with antiparallel nuclear spin states and multi-electron occupation we can minimise the longitudinal magnetic field gradient, known to couple charge noise into the device and dephase the qubit. We describe the operation of the qubit and show that by minimising the hyperfine interaction of the nuclear spins we can achieve $pi/2-X$ gate error rates of $sim 10^{-4}$ using realistic noise models. We highlight that the low charge noise environment in these all-epitaxial phosphorus-doped silicon qubits will facilitate the realisation of strong coupling of the qubit to superconducting microwave cavities allowing for long-distance two-qubit operations.
Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients onto the qubits, making the spin states susceptible to electric field noise and limiting their coherence times. We describe here a magnet design that minimizes qubit dephasing, while allowing for fast qubit control and addressability. Specifically, we design and optimize magnet dimensions and position relative to the quantum dots, minimizing dephasing from magnetic field gradients. The micromagnet-induced dephasing rates with this design are up to 3-orders of magnitude lower than state-of-the-art implementations, allowing for long coherence times. This design is robust against fabrication errors, and can be combined with a wide variety of silicon qubit device geometries, thereby allowing exploration of coherence limiting factors and novel upscaling approaches.
Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate flopping-mode electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low power electric dipole spin resonance. Through dispersive measurements of the single electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flopping-mode resonance, which should facilitate low power spin control in quantum dot arrays.
In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}rm{Si}$ ($p_{rm{Si}}=4.7%$) is about 4 times larger than that of $^{13}{rm C}$ ($p_{rm{C}}=1.1%$), the electron spin coherence time of defect centers in SiC nuclear spin bath in strong magnetic field ($B>300~rm{Gauss}$) is longer than that of nitrogen-vacancy (NV) centers in $^{13}{rm C}$ nuclear spin bath in diamond. The reason for this counter-intuitive result is the suppression of heteronuclear-spin flip-flop process in finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.
Quantum computation requires high-fidelity single-qubit and two-qubit gates on a scalable platform. Silicon spin qubits are a promising platform toward realization of this goal. In this paper we show how to perform single-qubit and CZ gates in a linear chain of three spin qubits with always-on exchange coupling, which is relevant for certain dot- and donor-based silicon devices. We also show how to make the CZ gate robust against both charge noise and pulse length error using a two-tone pulse shaping method. The robust pulse maintains a fidelity of 99.99% at 3.5% fluctuations in exchange or pulse amplitude, which is an improvement over the uncorrected pulses where this fidelity can only be maintained for fluctuations in exchange up to 2% or up to 0.2% in amplitude.
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