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Register a new userMagneto-resistance oscillations induced by high-intensity terahertz radiation
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We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiments with radiation intensity ranging over five orders of magnitude from $0.1$ W/cm$^2$ to $10^4$ W/cm$^2$ reveal high-power saturation of the MIRO amplitude, which is well described by an empirical fit function $I/(1 + I/I_s)^beta$ with $beta sim 1$. The saturation intensity Is is of the order of tens of W/cm$^2$ and increases by six times by increasing the radiation frequency from $0.6$ to $1.1$ THz. The results are discussed in terms of microscopic mechanisms of MIRO and compared to nonlinear effects observed earlier at significantly lower excitation frequencies.
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We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced magneto-oscillations can be largely extended by using high-frequency radiation.
We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 $times$ 10$^5$ cm$^2$/V s. In a number of other structures with QW widths ranging from 5 to 20 nm and lower mobility we observed an unconventional non-oscillatory photoconductivity signal which changes its sign upon magnetic field increase. This effect was observed in structures characterized by both normal and inverted band ordering, as well as in QWs with critical thickness and linear dispersion. In samples having Hall bar and Corbino geometries an increase of the magnetic field resulted in a single and double change of the sign of the photoresponse, respectively. We show that within the bolometric mechanism of the photoresponse these unusual features imply a non-monotonic behavior of the transport scattering rate, which should decrease (increase) with temperature for magnetic fields below (above) the certain value. This behavior is found to be consistent with the results of dark transport measurements of magnetoresistivity at different sample temperatures. Our experiments demonstrate that photoconductivity is a very sensitive probe of the temperature variations of the transport characteristics, even those that are hardly detectable using standard transport measurements.
We develop a systematic theory of microwave-induced oscillations in magnetoresistivity of a 2D electron gas in the vicinity of fractional harmonics of the cyclotron resonance, observed in recent experiments. We show that in the limit of well-separated Landau levels the effect is dominated by the multiphoton inelastic mechanism. At moderate magnetic field, two single-photon mechanisms become important. One of them is due to resonant series of multiple single-photon transitions, while the other originates from microwave-induced sidebands in the density of states of disorder-broadened Landau levels.
We report the observation of inverse-magnetic-field-periodic, radiation-induced magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W. Wegscheiders group, compare their characteristics with similar oscillations in V. Umanskys material, and describe the lineshape variation vs. the radiation power, $P$, in the two systems. We find that the radiation-induced oscillatory $Delta R_{xx}$, in both materials, can be described by $Delta R_{xx} = -A exp(-lambda/B)sin(2 pi F/B)$, where $A$ is the amplitude, $lambda$ is the damping parameter, and $F$ is the oscillation frequency. Both $lambda$ and $F$ turn out to be insensitive to $P$. On the other hand, $A$ grows nonlinearly with $P$.
Based on a structure consisting of a single graphene layer situated on a periodic dielectric grating, we show theoretically that intense terahertz (THz) radiations can be generated by an electron bunch moving atop the graphene layer. The underlying physics lies in the fact that a moving electron bunch with rather low electron energy ($sim$1 keV) can efficiently excite graphene plasmons (GPs) of THz frequencies with a strong confinement of near-fields. GPs can be further scattered into free space by the grating for those satisfying the phase matching condition. The radiation patterns can be controlled by varying the velocity of the moving electrons. Importantly, the radiation frequencies can be tuned by varying the Fermi level of the graphene layer, offering tunable THz radiations that can cover a wide frequency range. Our results could pave the way toward developing tunable and miniature THz radiation sources based on graphene.
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